Raman thermography of peak channel temperature in β-Ga2O3 MOSFETs

Dataset

Description

Research group data, Center for Device Thermography and Reliability, microwave and power semiconductor electronic devices and materials

James Pomeroy to be deputy steward
Date made available14 Dec 2018
PublisherUniversity of Bristol

Cite this

Sarua, A. (Creator), Kuball, M. (Creator), Pomeroy, J. (Creator), Uren, M. (Creator), Karboyan, S. (Creator), Baranyai, R. (Creator), Butler, P. (Creator), Zhou, Y. (Creator), Mfon, R. (Creator), Manikant, M. (Creator), Rackauskas, B. (Creator), Middleton, C. (Creator), Oner, B. (Creator), Dalcanale, S. (Creator), Gucmann, F. (Creator), Yuan, C. (Creator), Yang, F. (Creator), Waller, W. (Creator), Moule, T. (Creator), Cao, Y. (Creator), Wohlfahrt, M. (Creator), Field, D. (Creator), Wach, F. (Creator) (14 Dec 2018). Raman thermography of peak channel temperature in β-Ga2O3 MOSFETs. University of Bristol. 10.5523/bris.23lf14aqh1vir269kjtphcq6mu