Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
87%
Conductive
87%
Interface Trap
87%
Schottky Barrier Diode
87%
Conduction Band Edge
65%
Interface State
65%
Frequency Dispersion
43%
Experimental Result
43%
Capacitive Coupling
43%
Substrate Interface
43%
Resistive
43%
Gate Dielectric
43%
Equivalent Circuit Model
43%
Side Wall
29%
Voltage Stability
29%
Deep Level
21%
Band Gap
21%
Surface Potential
21%
Material Science
Schottky Barrier
100%
Tantalum
87%
Single Crystal
87%
Carrier Mobility
87%
Density
87%
Gallium
29%
Oxide Compound
29%
Charge Trapping
29%
Aluminum Oxide
21%
Capacitor
21%
Surface (Surface Science)
21%
Capacitance
21%
Earth and Planetary Sciences
Schottky Diode
87%
Equivalent Circuit
87%
Dielectric Material
87%
Trench
87%
Gallium Oxides
29%