Aditya Bhat Kundapura - Research Outputs - University of Bristol

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4 Article (Academic Journal)

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2025
Low On-Resistance and High Carrier Mobility in β‑Ga 2 O 3 Single-Crystal Substrates through Tantalum Doping
Vijayan V L, A., Vanjari, S. C., Bhat, A. K., Muazzam, U. U., Pomeroy, J. W., Smith, M. D., Moorthy Babu, S. & Kuball, M., 14 Jan 2025, In: ACS Applied Electronic Materials. 7, 1, p. 400-406 7 p.
Research output: Contribution to journal › Article (Academic Journal) › peer-review

Open Access
5 Citations (Scopus)
2024
Analysis of interface trap induced ledge in β-Ga₂O₃ based MOS structures using UV-assisted capacitance–voltage measurements
Bhat Kundapura, A., Kim, H.-S., Mishra, A., Smith, M. D., Uren, M. J. & Kuball, M. H. H., 21 May 2024, In: Journal of Applied Physics. 135, 19, 195704 .
Research output: Contribution to journal › Article (Academic Journal) › peer-review

Open Access
2 Citations (Scopus)
Turn-On Voltage Instability of β-Ga₂O₃ Trench Schottky Barrier Diodes With Different Fin Channel Orientations
Kim, H.-S., Bhat Kundapura, A., Smith, M. D. & Kuball, M. H. H., 1 Jun 2024, In: IEEE Transactions on Electron Devices. 71, 6, p. 3609 - 3613 5 p.
Research output: Contribution to journal › Article (Academic Journal) › peer-review
7 Citations (Scopus)
2023
Modelling of impedance dispersion in lateral β-Ga₂O₃ MOSFETs due to parallel conductive Si-accumulation layer
Chen, Z., Mishra, A., Bhat Kundapura, A., Smith, M. D., Uren, M. J., Kumar, S., Higashiwaki, M. & Kuball, M., 24 Apr 2023, In: Applied Physics Express. 16, 4, 4 p., 044002.
Research output: Contribution to journal › Article (Academic Journal) › peer-review

Open Access
2 Citations (Scopus)