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Professor Bernard H StarkM.A.(E.T.H.Zurich), Ph.D.(Cantab.)

Professor of Electrical Engineering

1 - 10 out of 84Page size: 10
  1. 2019
  2. E-pub ahead of print

    Dynamic characterization of SiC and GaN devices with BTI stresses

    Ortiz Gonzalez, J., Hedayati, M., Jahdi, S., Stark, B. H. & Alatise, O., 23 Sep 2019, In : Microelectronics Reliability. 100-101, 7 p., 113389.

    Research output: Contribution to journalArticle

  3. E-pub ahead of print

    The Impact of Temperature and Switching Rate on Dynamic Transients of High Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation

    Jahdi, S., Hedayati, M., Stark, B. & Mellor, P., 25 Jun 2019, In : IEEE Transactions on Industrial Electronics. 67, 6, p. 4556 - 4566 11 p., 8745699.

    Research output: Contribution to journalArticle

  4. Published
  5. Published

    Direct Approach of Simultaneously Eliminating EMI-Critical Oscillations and Decreasing Switching Losses for Wide Bandgap Power Semiconductors

    Middelstaedt, L., Wang, J., Stark, B. H. & Lindemann, A., 25 Apr 2019, In : IEEE Transactions on Power Electronics. 34, 11, p. 10376-10380 5 p.

    Research output: Contribution to journalArticle

  6. Published

    A new design technique for sub-nanosecond delay and 200 V/ns power supply slew-tolerant floating voltage level shifters for GaN SMPS

    Liu, D., Hollis, S. & Stark, B., 1 Mar 2019, In : IEEE Transactions on Circuits and Systems - I: Regular Papers. 66, 3, p. 1280-1290 11 p., 8535039.

    Research output: Contribution to journalArticle

  7. Published

    Stretching in Time of GaN Active Gate Driving Profiles to Adapt to Changing Load Current

    Dalton, J., Dymond, H. C. P., Wang, J., Hedayati, M., Liu, D., Drury, D. & Stark, B. H., Feb 2019, 2018 IEEE Energy Conversion Congress and Exposition (ECCE 2018): Proceedings of a meeting held 23-27 September 2018, Portland, Oregon, USA. Institute of Electrical and Electronics Engineers (IEEE), p. 3497-3502 6 p. 8557531

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  8. 2018
  9. E-pub ahead of print

    Infinity Sensor: Temperature Sensing in GaN Power Devices using Peak di/dt

    Wang, J., Hedayati, M., Liu, D., Adami, S-E., Dymond, H., Dalton, J. & Stark, B., 6 Dec 2018, 2018 IEEE Energy Conversion Congress and Exposition (ECCE 2018). Institute of Electrical and Electronics Engineers (IEEE), p. 884-890 7 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  10. E-pub ahead of print

    Investigation of a parasitic-inductance reduction technique for through-hole packaged power devices

    Dymond, H. & Stark, B. H., 6 Dec 2018, 2018 IEEE Energy Conversion Congress and Exposition (ECCE 2018). Institute of Electrical and Electronics Engineers (IEEE), p. 1964-1968 5 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  11. E-pub ahead of print

    Rapid Co-Optimisation of Turn-On and Turn-Off Gate Resistor Values in DC:DC Power Converters

    Dymond, H., Dalton, J. & Stark, B. H., 6 Dec 2018, 2018 IEEE Energy Conversion Congress and Exposition (ECCE 2018). Institute of Electrical and Electronics Engineers (IEEE), p. 5357-5364 8 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  12. Published

    Efficient base driver circuit for silicon carbide bipolar junction transistors

    McNeill, N., Stark, B. H., Finney, S. J., Holliday, D. & Dymond, H., Dec 2018, In : Electronics Letters. 54, 25, p. 1450-1452 3 p.

    Research output: Contribution to journalArticle

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