Dr Francesco Fornetti

My research interests include wide bandgap semiconductor devices and materials, particularly Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). During my time as a researcher at UoB, I succeeded in enhancing their application, mainly in the field of pulsed power amplifiers for Radar systems. I also had the opportunity to develop novel test methodologies and practical measurement rigs for GaN amplifiers at microwave frequencies. My PhD thesis, which includes introductory chapters on advanced semiconductor materials and devices in terms of their physics, technology, research status and commercial availability, has had thousands of downloads and very positive feedback. It also formed the basis of a popular webinar on GaN, which I presented. This was sponsored by one of the largest GaN manufacturers in the world, Cree Inc.