If you made any changes in Pure these will be visible here soon.

Personal profile

Research interests

My research interests include wide bandgap semiconductor devices and materials, particularly Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). During my time as a researcher at UoB, I succeeded in enhancing their application, mainly in the field of pulsed power amplifiers for Radar systems. I also had the opportunity to develop novel test methodologies and practical measurement rigs for GaN amplifiers at microwave frequencies. My PhD thesis, which includes introductory chapters on advanced semiconductor materials and devices in terms of their physics, technology, research status and commercial availability, has had thousands of downloads and very positive feedback. It also formed the basis of a popular webinar on GaN, which I presented. This was sponsored by one of the largest GaN manufacturers in the world, Cree Inc.

Structured keywords and research groupings

  • Engineering Education Research Group

Fingerprint

Dive into the research topics where Francesco Fornetti is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
  • 1 Similar Profiles
If you made any changes in Pure these will be visible here soon.