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Research interests

Wide bangap GaN power transistors can switch extremely quickly, e.g. current transitions in excess of 10 A/ns and voltage transitions in excess of 100 V/ns, but this presents a challenge in terms of keeping a system using such GaN transistors electromagnetically "quiet". With conventional gate driving techniques, to make transistors switch more "quietly", the transitions are slowed and losses increased (efficiency decreased). I am developing advanced gate driving techniques for wide bandgap GaN power transistors, aiming to eliminate any tradeoff between converter efficiency and electromagnetic compatibility.


  • Active Gate Driving
  • GaN
  • Wide Bandgap
  • Power Electronics


Dive into the research topics where Harry C P Dymond is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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