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Wide bangap GaN power transistors can switch extremely quickly, e.g. current transitions in excess of 10 A/ns and voltage transitions in excess of 100 V/ns, but this presents a challenge in terms of keeping a system using such GaN transistors electromagnetically "quiet". With conventional gate driving techniques, to make transistors switch more "quietly", the transitions are slowed and losses increased (efficiency decreased). I am developing advanced gate driving techniques for wide bandgap GaN power transistors, aiming to eliminate any tradeoff between converter efficiency and electromagnetic compatibility.
Keywords
- Active Gate Driving
- GaN
- Wide Bandgap
- Power Electronics
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Pulse quietening at source for higher-frequency power and signal switching
Dalton, J. J. O., Dymond, H. C. P., Liu, D., McNeill, J. N., Pamunuwa, I. D. B., Wang, J., Hollis, S. & Stark, B. H.
17/06/13 → 16/06/18
Project: Research
Research output
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Investigating GaN power device double-pulse testing efficacy in the face of VTH-shift, dynamic Rdson, and temperature variations
Hedayati, M., Dymond, H. C. P., Goswami, R. & Stark, B. H., 14 Jun 2021, 2021 IEEE Applied Power Electronics Conference and Exposition, APEC 2021. Institute of Electrical and Electronics Engineers (IEEE), p. 2291-2298 8 p. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)
Open AccessFile83 Downloads (Pure) -
Fast temperature sensing for GaN power devices using E-field probes
Hedayati, M., Dymond, H. C. P., Liu, D. & Stark, B. H., 9 Nov 2020, 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL). 7 p.Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)
Open AccessFile15 Downloads (Pure) -
Full custom design of an arbitrary waveform gate driver with 10 GHz waypoint rates for GaN FETs
Liu, D., Dymond, H. C. P., Hollis, S. J., Wang, J., Mcneill, J. N., Stark, B. H. & Pamunuwa, I. D. B., 14 Dec 2020, In: IEEE Transactions on Power Electronics. p. 8267 - 8279 13 p.Research output: Contribution to journal › Article (Academic Journal) › peer-review
Open AccessFile31 Downloads (Pure)