Projects per year
Wide bangap GaN power transistors can switch extremely quickly, e.g. current transitions in excess of 10 A/ns and voltage transitions in excess of 100 V/ns, but this presents a challenge in terms of keeping a system using such GaN transistors electromagnetically "quiet". With conventional gate driving techniques, to make transistors switch more "quietly", the transitions are slowed and losses increased (efficiency decreased). I am developing advanced gate driving techniques for wide bandgap GaN power transistors, aiming to eliminate any tradeoff between converter efficiency and electromagnetic compatibility.
17/06/13 → 16/06/18
Research Output per year
Building blocks for future dual-channel GaN gate drivers Arbitrary waveform driver, bootstrap voltage supply, and level shifterLiu, D., Dymond, H., Wang, J. & Stark, B., 23 May 2019. 4 p.
Research output: Contribution to conference › Conference Paper
Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)
Research output: Contribution to journal › Article (Academic Journal)