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Dr Harry C P Dymond

MEng(Bristol), PhD(Bristol)

 https://orcid.org/0000-0001-5664-7696

  • BS8 1TR

20082019

Research output per year

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Personal profile

Research interests

Wide bangap GaN power transistors can switch extremely quickly, e.g. current transitions in excess of 10 A/ns and voltage transitions in excess of 100 V/ns, but this presents a challenge in terms of keeping a system using such GaN transistors electromagnetically "quiet". With conventional gate driving techniques, to make transistors switch more "quietly", the transitions are slowed and losses increased (efficiency decreased). I am developing advanced gate driving techniques for wide bandgap GaN power transistors, aiming to eliminate any tradeoff between converter efficiency and electromagnetic compatibility.

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Projects

Pulse quietening at source for higher-frequency power and signal switching

Dalton, J. J. O., Dymond, H. C. P., Liu, D., Mcneill, J. N., Pamunuwa, I. D. B., Wang, J., Hollis, S. & Stark, B. H.

17/06/13 → 16/06/18

Project: Research

Research Output

  • 14 Conference Contribution (Conference Proceeding)
  • 5 Article (Academic Journal)
  • 1 Conference Paper

Building blocks for future dual-channel GaN gate drivers Arbitrary waveform driver, bootstrap voltage supply, and level shifter

Liu, D., Dymond, H., Wang, J. & Stark, B., 23 May 2019. 4 p.

Research output: Contribution to conference › Conference Paper

Open Access
File

    • Stretching in Time of GaN Active Gate Driving Profiles to Adapt to Changing Load Current

    Dalton, J., Dymond, H. C. P., Wang, J., Hedayati, M., Liu, D., Drury, D. & Stark, B. H., Feb 2019, 2018 IEEE Energy Conversion Congress and Exposition (ECCE 2018): Proceedings of a meeting held 23-27 September 2018, Portland, Oregon, USA. Institute of Electrical and Electronics Engineers (IEEE), p. 3497-3502 6 p. 8557531

    Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

    Open Access
    File
    • 106 Downloads (Pure)

    A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI

    Dymond, H. C. P., Wang, J., Liu, D., Dalton, J. J. O., McNeill, N., Pamunuwa, D., Hollis, S. J. & Stark, B. H., Jan 2018, In : IEEE Transactions on Power Electronics. 33, 1, p. 581-594 14 p., 7880639.

    Research output: Contribution to journal › Article (Academic Journal)

    Open Access
    File
    • 45 Citations (Scopus)
    404 Downloads (Pure)