Dr Harry C P Dymond

MEng(Bristol), PhD(Bristol)

  • BS8 1TR

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Research interests

Wide bangap GaN power transistors can switch extremely quickly, e.g. current transitions in excess of 10 A/ns and voltage transitions in excess of 100 V/ns, but this presents a challenge in terms of keeping a system using such GaN transistors electromagnetically "quiet". With conventional gate driving techniques, to make transistors switch more "quietly", the transitions are slowed and losses increased (efficiency decreased). I am developing advanced gate driving techniques for wide bandgap GaN power transistors, aiming to eliminate any tradeoff between converter efficiency and electromagnetic compatibility.

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