Projects per year
Wide bangap GaN power transistors can switch extremely quickly, e.g. current transitions in excess of 10 A/ns and voltage transitions in excess of 100 V/ns, but this presents a challenge in terms of keeping a system using such GaN transistors electromagnetically "quiet". With conventional gate driving techniques, to make transistors switch more "quietly", the transitions are slowed and losses increased (efficiency decreased). I am developing advanced gate driving techniques for wide bandgap GaN power transistors, aiming to eliminate any tradeoff between converter efficiency and electromagnetic compatibility.
17/06/13 → 16/06/18
Liu, D., Dymond, H. C. P., Hollis, S. J., Wang, J., Mcneill, J. N., Proynov, P. P. & Stark, B. H., 14 Dec 2020, In: IEEE Transactions on Power Electronics.
Research output: Contribution to journal › Article (Academic Journal) › peer-reviewOpen AccessFile11 Downloads (Pure)
Building blocks for future dual-channel GaN gate drivers Arbitrary waveform driver, bootstrap voltage supply, and level shifterLiu, D., Dymond, H., Wang, J. & Stark, B., 23 May 2019. 4 p.
Research output: Contribution to conference › Conference Paper › peer-reviewOpen AccessFile143 Downloads (Pure)
Dymond, H. C. P., Wang, J., Hedayati, M., Liu, D., Drury, D. & Stark, B. H., Feb 2019, 2018 IEEE Energy Conversion Congress and Exposition (ECCE 2018): Proceedings of a meeting held 23-27 September 2018, Portland, Oregon, USA. Institute of Electrical and Electronics Engineers (IEEE), p. 3497-3502 6 p. 8557531
Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)Open AccessFile9 Citations (Scopus)170 Downloads (Pure)