Research output per year
Research output per year
MEng(Bristol), PhD(Bristol)
BS8 1TR
Wide bangap GaN power transistors can switch extremely quickly, e.g. current transitions in excess of 10 A/ns and voltage transitions in excess of 100 V/ns, but this presents a challenge in terms of keeping a system using such GaN transistors electromagnetically "quiet". With conventional gate driving techniques, to make transistors switch more "quietly", the transitions are slowed and losses increased (efficiency decreased). I am developing advanced gate driving techniques for wide bandgap GaN power transistors, aiming to eliminate any tradeoff between converter efficiency and electromagnetic compatibility.
Research output: Contribution to journal › Article (Academic Journal) › peer-review
Research output: Contribution to journal › Article (Academic Journal) › peer-review
Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)
Dalton, J. J. O. (Researcher), Dymond, H. C. P. (Researcher), Liu, D. (Researcher), McNeill, J. N. (Co-Principal Investigator), Pamunuwa, I. D. B. (Co-Principal Investigator), Wang, J. (Researcher), Hollis, S. (Co-Principal Investigator) & Stark, B. H. (Principal Investigator)
17/06/13 → 16/06/18
Project: Research