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Research interests

GaN electronic devices are presently being developed for RF and power electronic applications. However, little is known about their reliability and the impact of buffer doping. We develop new experimental techniques to look at these aspects with projects including experimental and simulation components.

Of interest, is understanding how carbon doping impacts on the performance and reliability of the devices. Study of the charge transport through the epitaxial layers and comparison to device simulations enables a deeper physical insight into the devices. Ultimately this can predict the impact of traps and dislocations on the lateral transport in these lateral transistor devices.

In addition, vertical GaN devices, from Toyota R&D Labs, are being studied. In contrast to the lateral devices which are grown on silicon substrates, these are grown on GaN substrates. Transport along dislocations matter a lot in these devices but is poorly understood. Experimental techniques presently available in the Centre for Device Thermography and Reliability (CDTR) are being used to study these devices coupled with device simulation; new experimental techniques are being developed. The general aim of this project is to understand the role of defects (point defects, dislocations, and in general doping) on GaN power devices and how these can be tuned for optimal power device performance (and reliability).


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