Professor Martin H H Kuball

Diplom(Kaiserslautern), Ph.D.(Stuttgart)

  • Professor of Physics (Royal Society Wolfson Research Merit Award Holder), School of Physics
  • BS8 1TL

19962021

Research output per year

If you made any changes in Pure these will be visible here soon.

Personal profile

Research interests

I am leading the Center for Device Thermography and Reliability (CDTR), a research centre focusing on improving the thermal management, electrical performance and reliability of novel devices, circuits and packaging. Since 2001 we have been developing and applying new techniques for temperature, thermal conductivity, electrical conductivity and traps analysis, especially for microwave and power electronic semiconductor devices, made of wide bandgap materials, such as GaN, SiC and diamond. Our team of about 20 international researchers and PhD students works with industry and academia from across the globe to develop the next generation of technology for communications, microwave and power electronics to enable the low carbon economy.

Please visit the CDTR website for more information: http://www.bristol.ac.uk/physics/research/cdtr/

I am Royal Academy of Engineering Chair in Emerging Technologies, Fellow of the Institute of Electrical and Electronics Engineers (IEEE), Materials Research Society (MRS), Society of Photo-Optical Instrumentation Engineers (SPIE), IET (Institute of Engineering and Technology) and IoP (Institute of Physics), and Royal Society Merit Award Holder.

We are presently looking for PhD students to join our group in the following areas:

Many semiconductor devices operate nowadays at power density much greater than traditional Si and GaAs devices. When these devices are packaged, traditional CuMo based device packages are employed. These have been used for decades, but there is innovation on the horizon (and this is urgently needed). This project will explore exciting new materials, metal-diamond composites as well as nano-silver based die attaches to increase the ability of a semiconductor package to extract heat from the semiconductor chip. Challenges exist in how to optimize heat transport across interfaces including the diamond-metal interface. Heat transport in diamond is phonon based but in a metal it is mainly electron based which causes natural challenges and is still poorly understood.

Unless more energy efficient semiconductor devices are developed, there will be major energy shortages in the future.  If it progresses at the current rate, Artificial intelligence (AI) will consume most of the energy humans generate in a few decades. There is an exiting material on the horizon, Gallium Oxide (Ga2O3), with a bandgap of 4.9eV , that will allow high breakdown voltage, energy efficient power electronics, electric cars and electric planes. We have demonstrated its excellent device performance with collaborators in Japan and the USA, but also the limits it faces, namely excessive device heating as it is a low thermal conductivity material as well as carrier trapping. This project will address to understand the physical origins of these device limits and develop mitigation strategies; this will include the integration of this new material with diamond to aid heat extraction.

The high thermal conductivity of diamond has been widely exploited in the thermal management of semiconductor devices, enabling cooling of high temperature areas in high power electronic devices. To make production cost-effective, instead of using single crystalline diamond, heat is managed with the use of polycrystalline diamond. However, this material exhibits an extensive microstructure which impacts on phonon and, as a result, on heat transport. This process is still poorly understood and even more so if the diamond is integrated with electronic materials such as GaN for ultra-high-power microwave electronics (GaN-on-Diamond). The research project focuses on developing and applying phonon-based heat transport models to gain unprecedented insight into the thermal properties of GaN-on-Diamond ultra-high-power microwave electronics. The project benefits from our current EPSRC Programme Grant GaN-DaME project and will also contain experimental characterization of materials.

Graphene has generated lots of excitement over many years; but what comes after graphene? In this project we explore Te-based 2D semiconductors which have demonstrated ultra-high optical sensitivity suitable for detector applications. The challenge is these materials oxidize quickly and need to be encapsulated, which can be achieved using graphene but also BN; we will explore advanced devices using these new materials including GaTe but also using BN in particular, next generation detectors (optical and neutrons) as well as transistors.

Fingerprint Dive into the research topics where Martin H H Kuball is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 5 Similar Profiles

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Projects

NEW CSC Full Proposal

Kuball, M. H. H.

1/08/1931/01/21

Project: Research

MANGI

Kuball, M. H. H.

1/06/1831/05/23

Project: Research, Parent

8099 MANGI PDRA funding

Kuball, M. H. H.

1/06/1831/05/23

Project: Research

Research Output

GaN-on-diamond technology platform: Bonding-free membrane manufacturing process

Smith, M. D., Field, D. E., Yuan, C., Pomeroy, J. W., Uren, M. J., Kuball, M. H. H. & al., E., 3 Mar 2020, In : AIP Advances. 10, 3, 6 p., 035306.

Research output: Contribution to journalArticle (Academic Journal)

Open Access
File
  • 57 Downloads (Pure)

    Improvement of Electron Transport Property and On-Resistance in Normally-Off Al2O3/AlGaN/GaN MOS-HEMTs Using Post-Etch Surface Treatment

    Zhu, J., Jing, S., Ma, X., Liu, S., Wang, P., Zhang, Y., Zhu, Q. Z., Mi, M., Yang, L., Kuball, M. H. H. & Hao, Y., 8 Jul 2020, (Accepted/In press) In : IEEE Transactions on Electron Devices.

    Research output: Contribution to journalArticle (Academic Journal)

  • Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique

    Zhu, J., Zhang, Y., Ma, X., Liu, S., Jing, S., Zhu, Q. Z., Mi, M., Hou, B., Yang, L., Uren, M. J., Kuball, M. H. H. & Hao, Y., 19 May 2020, In : Semiconductor Science and Technology. 35, 6, 7 p., 065017.

    Research output: Contribution to journalArticle (Academic Journal)

  • Datasets

    Raman thermography of peak channel temperature in β-Ga2O3 MOSFETs

    Sarua, A. (Creator), Kuball, M. H. H. (Creator), Pomeroy, J. W. (Creator), Uren, M. J. (Creator), Karboyan, S. (Creator), Baranyai, R. (Creator), Butler, P. (Creator), Zhou, Y. (Creator), Mfon, R. (Creator), Manikant, M. (Creator), Rackauskas, B. (Creator), Middleton, C. (Creator), Oner, B. (Creator), Dalcanale, S. (Creator), Gucmann, F. (Creator), Yuan, C. (Creator), Yang, F. (Creator), Waller, W. (Creator), Moule, T. G. (Creator), Cao, Y. (Creator), Wohlfahrt, M. (Creator), Field, D. E. (Creator) & Wach, F. M. (Creator), University of Bristol, 14 Dec 2018

    Dataset