E2coGaN - Energy Efficient Converters using GaN Power Devices

Kuball, Martin H H (Principal Investigator)

School of Physics

2 Conference Contribution (Conference Proceeding)
2 Article (Academic Journal)
1 Conference Abstract
1 Conference Paper

6 results

2017
“Leaky Dielectric” Model for the Suppression of Dynamic R_ON in Carbon Doped AlGaN/GaN HEMTs
Uren, M., Karboyan, S., Chatterjee, I., Pooth, A., Moens, P., Banerjee, A. & Kuball, M., Jul 2017, In: IEEE Transactions on Electron Devices. 64, 7, p. 2826-2834 9 p.
Research output: Contribution to journal › Article (Academic Journal) › peer-review

Open Access
File
199 Citations (Scopus)

622 Downloads (Pure)
2016
(Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: an industry perspective
Moens, P., Banerjee, A., Constant, A., Coppens, P., Caesar, M., Li, Z., Vanderweghe, S., Declercq, F., Padmanabhan, B., Jeon, W., Guo, J., Salih, A., Tack, M., Meneghini, M., Dalcanale, S., Tajilli, A., Meneghesso, G., Zanoni, E., Uren, M. & Chatterjee, I. & 2 others, Karboyan, S. & Kuball, M., 19 May 2016, 229th ECS Meeting May 29, 2016 - June 2, 2016 San Diego, CA: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. Roozeboom, F., Narayanan, V., Kakushima, K., Timans, P. J., Gusev, E. P., Karim, Z. & De Gendt, S. (eds.). The Electrochemical Society, Inc, p. 65-76 12 p. (ECS Transactions; vol. 72, no. 4).
Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Open Access
File
24 Citations (Scopus)

638 Downloads (Pure)
Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs
Moens, P., Banerjee, A., Uren, M., Meneghini, M., Karboyan, S., Chatterjee, I., Vanmeerbeek, P., Caesar, M., Liu, C., Salih, A., Zanoni, E., Meneghesso, G., Kuball, M. & Tack, M., Mar 2016, 2015 IEEE International Electron Devices Meeting (IEDM 2015): Proceedings of a meeting held 7-9 December 2015, Washington, DC, USA. Institute of Electrical and Electronics Engineers (IEEE), p. 35.2.1-35.2.4 4 p.
Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Open Access
File
75 Citations (Scopus)

745 Downloads (Pure)
2015
Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors
Uren, M. J., Caesar, M., Karboyan, S., Moens, P., Vanmeerbeek, P. & Kuball, M. H. H., 8 Jun 2015, In: IEEE Electron Device Letters. 36, 8, p. 826-828 3 p.
Research output: Contribution to journal › Article (Academic Journal) › peer-review

Open Access
File
62 Citations (Scopus)

836 Downloads (Pure)
Electron Trapping in GaN-on-Si Power HEMTs: Impact of Positive Substrate Bias
Uren, M. J., Caesar, M., Chatterjee, I., Karboyan, S., Meneghini, M., Meneghesso, G., Zanoni, E., Moens, P., Vanmeerbeek, P. & Kuball, M., Aug 2015. 2 p.
Research output: Contribution to conference › Conference Abstract

Open Access
File
221 Downloads (Pure)
On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices
Moens, P., Vanmeerbeek, P., Banerjee, A., Caesar, M., Guo, J., Liu, C., Salih, A., Meneghini, M., Kuball, M., Uren, M. J., Meneghesso, G., Zanoni, E. & Tack, M., May 2015, p. 37-40. 4 p.
Research output: Contribution to conference › Conference Paper › peer-review
111 Citations (Scopus)

522 Downloads (Pure)

E2coGaN - Energy Efficient Converters using GaN Power Devices

Research output

Search results

“Leaky Dielectric” Model for the Suppression of Dynamic RON in Carbon Doped AlGaN/GaN HEMTs

(Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: an industry perspective

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Electron Trapping in GaN-on-Si Power HEMTs: Impact of Positive Substrate Bias

On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

“Leaky Dielectric” Model for the Suppression of Dynamic R_ON in Carbon Doped AlGaN/GaN HEMTs