E2coGaN - Energy Efficient Converters using GaN Power Devices

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  • 2016

    (Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: an industry perspective

    Moens, P., Banerjee, A., Constant, A., Coppens, P., Caesar, M., Li, Z., Vanderweghe, S., Declercq, F., Padmanabhan, B., Jeon, W., Guo, J., Salih, A., Tack, M., Meneghini, M., Dalcanale, S., Tajilli, A., Meneghesso, G., Zanoni, E., Uren, M. & Chatterjee, I. & 2 others, Karboyan, S. & Kuball, M., 19 May 2016, 229th ECS Meeting May 29, 2016 - June 2, 2016 San Diego, CA: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. Roozeboom, F., Narayanan, V., Kakushima, K., Timans, P. J., Gusev, E. P., Karim, Z. & De Gendt, S. (eds.). The Electrochemical Society, Inc, p. 65-76 12 p. (ECS Transactions; vol. 72, no. 4).

    Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

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    24 Citations (Scopus)
    638 Downloads (Pure)
  • Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

    Moens, P., Banerjee, A., Uren, M., Meneghini, M., Karboyan, S., Chatterjee, I., Vanmeerbeek, P., Caesar, M., Liu, C., Salih, A., Zanoni, E., Meneghesso, G., Kuball, M. & Tack, M., Mar 2016, 2015 IEEE International Electron Devices Meeting (IEDM 2015): Proceedings of a meeting held 7-9 December 2015, Washington, DC, USA. Institute of Electrical and Electronics Engineers (IEEE), p. 35.2.1-35.2.4 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

    Open Access
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    75 Citations (Scopus)
    745 Downloads (Pure)