High Performance Buffers for RF GaN Electronics

Status	Finished
Effective start/end date	17/11/16 → 16/05/20
Links	http://gtr.rcuk.ac.uk/projects?ref=EP/N031563/1

Access Project

Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs
Uren, M. J. & Kuball, M., 3 Feb 2021, In: Japanese Journal of Applied Physics. 60, SB, 14 p., SB0802.
Research output: Contribution to journal › Article (Academic Journal) › peer-review

Open Access
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50 Citations (Scopus)

625 Downloads (Pure)
Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks
Wohlfahrt, M., Uren, M. J., Yin, Y., Lee, K. B. & Kuball, M., 13 Dec 2021, In: Applied Physics Letters. 119, 24, 243502.
Research output: Contribution to journal › Article (Academic Journal) › peer-review

Open Access
11 Citations (Scopus)
The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs
Yang, F., Dalcanale, S., Gajda, M., Karboyan, S., Uren, M. J. & Kuball, M. H. H., 10 Feb 2020, In: IEEE Transactions on Electron Devices. 67, 3
Research output: Contribution to journal › Article (Academic Journal) › peer-review

48 Citations (Scopus)