Novel Thermal Management Concepts: High Power High Frequency Planar Gunn Diodes

Status	Finished
Effective start/end date	6/09/10 → 6/09/14

Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistors
Montes Bajo, M., Sun, H., Uren, M. J. & Kuball, M. H. H., 2014, In: Applied Physics Letters. 104, 22, 5 p., 223506.
Research output: Contribution to journal › Article (Academic Journal) › peer-review

Open Access
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23 Citations (Scopus)

578 Downloads (Pure)
Impact ionisation electroluminescence in planar GaAs-based heterostructure Gunn diodes: Spatial distribution and impact of doping nonuniformities
Montes Bajo, M., Dunn, G., Stephen, A., Khalid, A., Cumming, D. R. S., Oxley, C. H., Glover, J. & Kuball, M. H. H., 7 Apr 2013, In: Journal of Applied Physics. 113, 12, 6 p., 124505.
Research output: Contribution to journal › Article (Academic Journal) › peer-review

Open Access
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12 Citations (Scopus)

448 Downloads (Pure)
Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
Killat, N., Montes Bajo, M., Paskova, T., Evans, K. R., Leach, J., Li, X., Oezguer, U., Morkoc, H., Chabak, K. D., Crespo, A., Gillespie, J. K., Fitch, R., Kossler, M., Walker, D. E., Trejo, M., Via, G. D., Blevins, J. D. & Kuball, M., 4 Nov 2013, In: Applied Physics Letters. 103, 19, 4 p., 193507.
Research output: Contribution to journal › Article (Academic Journal) › peer-review
24 Citations (Scopus)

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