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Silicon Compatible GaN Power Electronics

Project Details

StatusFinished
Effective start/end date1/03/13 → 31/08/18

Research Groups and Themes

  • CDTR

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  • 5 Article (Academic Journal)
  • 3 Conference Contribution (Conference Proceeding)
  • 1 Conference Abstract
  • 1 Conference Paper

  • “Leaky Dielectric” Model for the Suppression of Dynamic RON in Carbon Doped AlGaN/GaN HEMTs

    Uren, M., Karboyan, S., Chatterjee, I., Pooth, A., Moens, P., Banerjee, A. & Kuball, M., Jul 2017, In: IEEE Transactions on Electron Devices. 64, 7, p. 2826-2834 9 p.

    Research output: Contribution to journal › Article (Academic Journal) › peer-review

    Open Access
    File
    257 Citations (Scopus)
    748 Downloads (Pure)

  • (Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: an industry perspective

    Moens, P., Banerjee, A., Constant, A., Coppens, P., Caesar, M., Li, Z., Vanderweghe, S., Declercq, F., Padmanabhan, B., Jeon, W., Guo, J., Salih, A., Tack, M., Meneghini, M., Dalcanale, S., Tajilli, A., Meneghesso, G., Zanoni, E., Uren, M. & Chatterjee, I. & 2 others, Karboyan, S. & Kuball, M., 19 May 2016, 229th ECS Meeting May 29, 2016 - June 2, 2016 San Diego, CA: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. Roozeboom, F., Narayanan, V., Kakushima, K., Timans, P. J., Gusev, E. P., Karim, Z. & De Gendt, S. (eds.). The Electrochemical Society, Inc, p. 65-76 12 p. (ECS Transactions; vol. 72, no. 4).

    Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

    Open Access
    File
    26 Citations (Scopus)
    827 Downloads (Pure)

  • Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

    Moens, P., Banerjee, A., Uren, M., Meneghini, M., Karboyan, S., Chatterjee, I., Vanmeerbeek, P., Caesar, M., Liu, C., Salih, A., Zanoni, E., Meneghesso, G., Kuball, M. & Tack, M., Mar 2016, 2015 IEEE International Electron Devices Meeting (IEDM 2015): Proceedings of a meeting held 7-9 December 2015, Washington, DC, USA. Institute of Electrical and Electronics Engineers (IEEE), p. 35.2.1-35.2.4 4 p.

    Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

    Open Access
    File
    86 Citations (Scopus)
    929 Downloads (Pure)
View all 10 research outputs