10Gb/s operation of novel single-mode, two-contact InGaAsP lasers with low drive current

AB Massara, LJ Sargent, PJ Heard, RV Penty, IH White

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

2 Citations (Scopus)

Abstract

The single-mode performance of two-contact indium gallium arsenide phosphide lasers with low drive current was demonstrated. The device was fabricated using focused ion beam etching of single contact lasers. The signal bandwidth was found to increase on employing a two-dimensional lattice grating without perturbation of the device dynamics.
Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, 2001 (CLEO '01), Baltimore
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages191 - 192
Number of pages2
Volume3
ISBN (Print)1557526621
DOIs
Publication statusPublished - 6 May 2001

Bibliographical note

Conference Organiser: IEEE

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    Massara, AB., Sargent, LJ., Heard, PJ., Penty, RV., & White, IH. (2001). 10Gb/s operation of novel single-mode, two-contact InGaAsP lasers with low drive current. In Conference on Lasers and Electro-Optics, 2001 (CLEO '01), Baltimore (Vol. 3, pp. 191 - 192). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/CLEO.2001.947694