The single-mode performance of two-contact indium gallium arsenide phosphide lasers with low drive current was demonstrated. The device was fabricated using focused ion beam etching of single contact lasers. The signal bandwidth was found to increase on employing a two-dimensional lattice grating without perturbation of the device dynamics.
|Translated title of the contribution||10Gb/s operation of novel single-mode, two-contact InGaAsP lasers with low drive current|
|Title of host publication||Conference on Lasers and Electro-Optics, 2001 (CLEO '01), Baltimore|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Pages||191 - 192|
|Number of pages||2|
|Publication status||Published - 6 May 2001|