Due to the keen interest in improving the high-speed and high-temperature performance of 1.3-/spl mu/m wavelength lasers, we compare, for the first time, the material gain of three different competing active layer materials, namely InGaAsP-InGaAsP, AlGaInAs-AlGaInAs, and InGaAsN-GaAs. We present a theoretical study of the gain of each quantum-well material system and present the factors that influence the material gain performance of each system. We find that AlGaInAs and InGaAsN active layer materials have substantially better material gain performance than the commonly used InGaAsP, both at room temperature and at high temperature.
|Translated title of the contribution||1.3-μm quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: a theoretical study|
|Pages (from-to)||1553 - 1564|
|Number of pages||12|
|Journal||IEEE Journal of Quantum Electronics|
|Publication status||Published - Dec 2002|