1.3-μm quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: a theoretical study

JCL Yong, JM Rorison, IH White

Research output: Contribution to journalArticle (Academic Journal)peer-review

76 Citations (Scopus)

Abstract

Due to the keen interest in improving the high-speed and high-temperature performance of 1.3-/spl mu/m wavelength lasers, we compare, for the first time, the material gain of three different competing active layer materials, namely InGaAsP-InGaAsP, AlGaInAs-AlGaInAs, and InGaAsN-GaAs. We present a theoretical study of the gain of each quantum-well material system and present the factors that influence the material gain performance of each system. We find that AlGaInAs and InGaAsN active layer materials have substantially better material gain performance than the commonly used InGaAsP, both at room temperature and at high temperature.
Translated title of the contribution1.3-μm quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: a theoretical study
Original languageEnglish
Pages (from-to)1553 - 1564
Number of pages12
JournalIEEE Journal of Quantum Electronics
Volume38 (12)
DOIs
Publication statusPublished - Dec 2002

Bibliographical note

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Fingerprint Dive into the research topics of '1.3-μm quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: a theoretical study'. Together they form a unique fingerprint.

Cite this