2 dimensional electron gas uniformity of GaN HFET layers on SiC

D J Wallis; P J Wright; D E J Soley; L Koker; M J Uren; T Martin

doi:10.1016/j.jcrysgro.2011.10.054

2 dimensional electron gas uniformity of GaN HFET layers on SiC

D J Wallis, P J Wright, D E J Soley, L Koker, M J Uren, T Martin

School of Physics

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Abstract

As GaN power transistor technology matures it is increasingly important to understand any links between substrate “quality”, epi-layer growth and electrical characteristics of the 2-dimensional electron gas (2DEG), which forms the active part of devices. We present a study, which makes use of full wafer mapping techniques to examine these relationships. Substrate off-cut is shown to be an important parameter in controlling the uniformity of GaN HFET device layers on SiC substrates.

Original language	English
Pages (from-to)	125-128
Number of pages	4
Journal	Journal of Crystal Growth
Volume	338
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.10.054
Publication status	Published - 2012

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Wallis JCG 338 125 2012 preprintSubmitted manuscript, 381 KB

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@article{c554d48dfd444ad8aef3577820918c60,

title = "2 dimensional electron gas uniformity of GaN HFET layers on SiC",

abstract = "As GaN power transistor technology matures it is increasingly important to understand any links between substrate “quality”, epi-layer growth and electrical characteristics of the 2-dimensional electron gas (2DEG), which forms the active part of devices. We present a study, which makes use of full wafer mapping techniques to examine these relationships. Substrate off-cut is shown to be an important parameter in controlling the uniformity of GaN HFET device layers on SiC substrates.",

author = "Wallis, {D J} and Wright, {P J} and Soley, {D E J} and L Koker and Uren, {M J} and T Martin",

year = "2012",

doi = "10.1016/j.jcrysgro.2011.10.054",

language = "English",

volume = "338",

pages = "125--128",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "North-Holland Publishing Company",

number = "1",

}

TY - JOUR

T1 - 2 dimensional electron gas uniformity of GaN HFET layers on SiC

AU - Wallis, D J

AU - Wright, P J

AU - Soley, D E J

AU - Koker, L

AU - Uren, M J

AU - Martin, T

PY - 2012

Y1 - 2012

N2 - As GaN power transistor technology matures it is increasingly important to understand any links between substrate “quality”, epi-layer growth and electrical characteristics of the 2-dimensional electron gas (2DEG), which forms the active part of devices. We present a study, which makes use of full wafer mapping techniques to examine these relationships. Substrate off-cut is shown to be an important parameter in controlling the uniformity of GaN HFET device layers on SiC substrates.

AB - As GaN power transistor technology matures it is increasingly important to understand any links between substrate “quality”, epi-layer growth and electrical characteristics of the 2-dimensional electron gas (2DEG), which forms the active part of devices. We present a study, which makes use of full wafer mapping techniques to examine these relationships. Substrate off-cut is shown to be an important parameter in controlling the uniformity of GaN HFET device layers on SiC substrates.

U2 - 10.1016/j.jcrysgro.2011.10.054

DO - 10.1016/j.jcrysgro.2011.10.054

M3 - Article (Academic Journal)

VL - 338

SP - 125

EP - 128

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -

2 dimensional electron gas uniformity of GaN HFET layers on SiC

Abstract

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