2 dimensional electron gas uniformity of GaN HFET layers on SiC

D J Wallis, P J Wright, D E J Soley, L Koker, M J Uren, T Martin

Research output: Contribution to journalArticle (Academic Journal)peer-review

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Abstract

As GaN power transistor technology matures it is increasingly important to understand any links between substrate “quality”, epi-layer growth and electrical characteristics of the 2-dimensional electron gas (2DEG), which forms the active part of devices. We present a study, which makes use of full wafer mapping techniques to examine these relationships. Substrate off-cut is shown to be an important parameter in controlling the uniformity of GaN HFET device layers on SiC substrates.
Original languageEnglish
Pages (from-to)125-128
Number of pages4
JournalJournal of Crystal Growth
Volume338
Issue number1
DOIs
Publication statusPublished - 2012

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