3-D finite element monte carlo simulations of scaled Si SOI FinFET with different cross sections

Daniel Nagy, Muhammad A. Elmessary, Manuel Aldegunde, Raul Valin, Antonio Martinez, Jari Lindberg, Wulf G. Dettmer, Djordje Peric, Antonio J. Garcia-Loureiro, Karol Kalna

Research output: Contribution to journalArticle (Academic Journal)peer-review

17 Citations (Scopus)


Nanoscaled Si SOI FinFETs with gate lengths of 12.8 and 10.7 nm are simulated using 3-D finite element Monte Carlo (MC) simulations with 2-D Schrödinger-based quantum corrections. These nonplanar transistors are studied for two cross sections: rectangular-like and triangular-like, and for two channel orientations: 100 and le; 110. The 10.7-nm gate length rectangular-like FinFET is also simulated using the 3-D nonequilibrium Green's functions (NEGF) technique and the results are compared with MC simulations. The 12.8 and 10.7 nm gate length rectangular-like FinFETs give larger drive currents per perimeter by about 33-37% than the triangular-like shaped but are outperformed by the triangular-like ones when normalised by channel area. The devices with a 100 channel orientation deliver a larger drive current by about 11% more than their counterparts with a 110 channel when scaled to 12.8 nm and to 10.7 nm gate lengths. ID-VG characteristics obtained from the 3-D NEGF simulations show a remarkable agreement with the MC results at low drain bias. At a high drain bias, the NEGF overestimates the on-current from about VG-VT=0.3 V because the NEGF simulations do not include the scattering with interface roughness and ionized impurities.

Original languageEnglish
Article number6948329
Pages (from-to)93-100
Number of pages8
JournalIEEE Transactions on Nanotechnology
Issue number1
Publication statusPublished - 1 Jan 2015


  • cross-section shapes
  • FinFET
  • Monte Carlo simulations
  • NEGF simulations


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