3D FDTD is used to study the effect of surface roughening on the emission of a point source embedded in GaAs with a mirror behind the dipole. Enhancement factors of 10 : 1 are observed

G Yuan; S Yu

doi:10.1109/CLEOE-IQEC.2007.4385999

3D FDTD is used to study the effect of surface roughening on the emission of a point source embedded in GaAs with a mirror behind the dipole. Enhancement factors of 10 : 1 are observed

G Yuan
, S Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

The switching dynamics of a semiconductor ring laser is investigated in this study using a small signal rate-equation-based analysis. Numerical simulation results confirm that, after the initial triggering pulse, the transient behavior of the laser is dominated by mode competition superposition and photon-carrier coupling process

Translated title of the contribution	3D FDTD is used to study the effect of surface roughening on the emission of a point source embedded in GaAs with a mirror behind the dipole. Enhancement factors of 10 : 1 are observed
Original language	English
Title of host publication	European Conference on Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference (CLEOE-IQEC 2007)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1 - 1
Number of pages	1
ISBN (Print)	9781424409310
DOIs	https://doi.org/10.1109/CLEOE-IQEC.2007.4385999
Publication status	Published - 17 Jun 2007

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Yuan, G., & Yu, S. (2007). 3D FDTD is used to study the effect of surface roughening on the emission of a point source embedded in GaAs with a mirror behind the dipole. Enhancement factors of 10 : 1 are observed. In European Conference on Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference (CLEOE-IQEC 2007) (pp. 1 - 1). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/CLEOE-IQEC.2007.4385999

Yuan, G ; Yu, S. / 3D FDTD is used to study the effect of surface roughening on the emission of a point source embedded in GaAs with a mirror behind the dipole. Enhancement factors of 10 : 1 are observed. European Conference on Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference (CLEOE-IQEC 2007). Institute of Electrical and Electronics Engineers (IEEE), 2007. pp. 1 - 1

@inproceedings{603bed0e2ef3408b8c3aa8abcb11c255,

title = "3D FDTD is used to study the effect of surface roughening on the emission of a point source embedded in GaAs with a mirror behind the dipole. Enhancement factors of 10 : 1 are observed",

abstract = "The switching dynamics of a semiconductor ring laser is investigated in this study using a small signal rate-equation-based analysis. Numerical simulation results confirm that, after the initial triggering pulse, the transient behavior of the laser is dominated by mode competition superposition and photon-carrier coupling process",

author = "G Yuan and S Yu",

year = "2007",

month = jun,

day = "17",

doi = "10.1109/CLEOE-IQEC.2007.4385999",

language = "English",

isbn = "9781424409310",

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booktitle = "European Conference on Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference (CLEOE-IQEC 2007)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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Yuan, G & Yu, S 2007, 3D FDTD is used to study the effect of surface roughening on the emission of a point source embedded in GaAs with a mirror behind the dipole. Enhancement factors of 10 : 1 are observed. in European Conference on Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference (CLEOE-IQEC 2007). Institute of Electrical and Electronics Engineers (IEEE), pp. 1 - 1. https://doi.org/10.1109/CLEOE-IQEC.2007.4385999

3D FDTD is used to study the effect of surface roughening on the emission of a point source embedded in GaAs with a mirror behind the dipole. Enhancement factors of 10 : 1 are observed. / Yuan, G; Yu, S.
European Conference on Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference (CLEOE-IQEC 2007). Institute of Electrical and Electronics Engineers (IEEE), 2007. p. 1 - 1.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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T1 - 3D FDTD is used to study the effect of surface roughening on the emission of a point source embedded in GaAs with a mirror behind the dipole. Enhancement factors of 10 : 1 are observed

AU - Yuan, G

AU - Yu, S

PY - 2007/6/17

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N2 - The switching dynamics of a semiconductor ring laser is investigated in this study using a small signal rate-equation-based analysis. Numerical simulation results confirm that, after the initial triggering pulse, the transient behavior of the laser is dominated by mode competition superposition and photon-carrier coupling process

AB - The switching dynamics of a semiconductor ring laser is investigated in this study using a small signal rate-equation-based analysis. Numerical simulation results confirm that, after the initial triggering pulse, the transient behavior of the laser is dominated by mode competition superposition and photon-carrier coupling process

U2 - 10.1109/CLEOE-IQEC.2007.4385999

DO - 10.1109/CLEOE-IQEC.2007.4385999

M3 - Conference Contribution (Conference Proceeding)

SN - 9781424409310

SP - 1

EP - 1

BT - European Conference on Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference (CLEOE-IQEC 2007)

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Yuan G, Yu S. 3D FDTD is used to study the effect of surface roughening on the emission of a point source embedded in GaAs with a mirror behind the dipole. Enhancement factors of 10 : 1 are observed. In European Conference on Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference (CLEOE-IQEC 2007). Institute of Electrical and Electronics Engineers (IEEE). 2007. p. 1 - 1 doi: 10.1109/CLEOE-IQEC.2007.4385999

3D FDTD is used to study the effect of surface roughening on the emission of a point source embedded in GaAs with a mirror behind the dipole. Enhancement factors of 10 : 1 are observed

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