A 2GHz GaN Class-J power amplifier for base station applications

K Mimis; KA Morris; JP McGeehan

doi:10.1109/PAWR.2011.5725378

A 2GHz GaN Class-J power amplifier for base station applications

K Mimis, KA Morris, JP McGeehan

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

36 Citations (Scopus)

1096 Downloads (Pure)

Abstract

The design and implementation of a high efficiency Class-J power amplifier (PA) for base station applications is reported. A commercially available 10 W GaN HEMT device was used, for which a large-signal model and an extrinsic parasitic model were available. Following Class-J theory, the needed harmonic terminations at the output of the transistor were defined and realised. Experimental results show good agreement with simulations verifying the class of operation. Efficiency above 70% is demonstrated with an output power of 39.7 dBm at an input drive of 29 dBm. High efficiency is sustained over a bandwidth of 140 MHz.

Translated title of the contribution	A 2GHz GaN Class-J power amplifier for base station applications
Original language	English
Title of host publication	2011 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	5 - 8
ISBN (Print)	9781424484164
DOIs	https://doi.org/10.1109/PAWR.2011.5725378
Publication status	Published - Jan 2011
Event	IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications - Phoenix, Arizona, United States Duration: 1 Jan 2011 → …

Conference

Conference	IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications
Country/Territory	United States
City	Phoenix, Arizona
Period	1/01/11 → …

Bibliographical note

Conference Proceedings/Title of Journal: IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)
Conference Organiser: IEEE
Rose publication type: Conference contribution

Additional information: With accompanying conference presentation and conference poster

Sponsorship: The authors would like to thank Michael Paynter for providing the extrinsic parasitics model and Cree Inc. for providing the devices used in this work. The work
reported in this paper has formed part of the Green Radio Research Programme of the Virtual Centre of Excellence in Mobile & Personal Communications, Mobile VCE,
www.mobilevce.com. Fully detailed technical reports on this research are available to Industrial Members of Mobile VCE.

Terms of use: Copyright © 2011 IEEE. Reprinted with permission, from - K Mimis, KA Morris, J McGeehan; 'A 2GHz GaN Class-J power amplifier for base station applications ', IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), 2011; January 2011.

This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Bristol's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected].

By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Keywords

Gallium compounds
power amplifiers
high electron mobility transistors

Access to Document

10.1109/PAWR.2011.5725378

Conference paperAccepted author manuscript, 114 KB
Accompanying conference posterAccepted author manuscript, 1.14 MB
Accompanying conference presentationAccepted author manuscript, 751 KB

http://hdl.handle.net/1983/1765

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Persistent link

EPSRC/VCE STRATEGIC PARTNERSHIP: GREEN RADIO
Armour, S. M. D. (Principal Investigator)
12/01/09 → 12/07/12
Project: Research

Cite this

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title = "A 2GHz GaN Class-J power amplifier for base station applications",

abstract = "The design and implementation of a high efficiency Class-J power amplifier (PA) for base station applications is reported. A commercially available 10 W GaN HEMT device was used, for which a large-signal model and an extrinsic parasitic model were available. Following Class-J theory, the needed harmonic terminations at the output of the transistor were defined and realised. Experimental results show good agreement with simulations verifying the class of operation. Efficiency above 70% is demonstrated with an output power of 39.7 dBm at an input drive of 29 dBm. High efficiency is sustained over a bandwidth of 140 MHz.",

keywords = "Gallium compounds, power amplifiers, high electron mobility transistors",

author = "K Mimis and KA Morris and JP McGeehan",

note = "Conference Proceedings/Title of Journal: IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Conference Organiser: IEEE Rose publication type: Conference contribution Additional information: With accompanying conference presentation and conference poster Sponsorship: The authors would like to thank Michael Paynter for providing the extrinsic parasitics model and Cree Inc. for providing the devices used in this work. The work reported in this paper has formed part of the Green Radio Research Programme of the Virtual Centre of Excellence in Mobile & Personal Communications, Mobile VCE, www.mobilevce.com. Fully detailed technical reports on this research are available to Industrial Members of Mobile VCE. Terms of use: Copyright {\textcopyright} 2011 IEEE. Reprinted with permission, from - K Mimis, KA Morris, J McGeehan; 'A 2GHz GaN Class-J power amplifier for base station applications ', IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), 2011; January 2011. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Bristol's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it. ; IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications ; Conference date: 01-01-2011",

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Mimis, K, Morris, KA & McGeehan, JP 2011, A 2GHz GaN Class-J power amplifier for base station applications. in 2011 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR). Institute of Electrical and Electronics Engineers (IEEE), pp. 5 - 8, IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, Phoenix, Arizona, United States, 1/01/11. https://doi.org/10.1109/PAWR.2011.5725378

A 2GHz GaN Class-J power amplifier for base station applications. / Mimis, K; Morris, KA; McGeehan, JP.
2011 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR). Institute of Electrical and Electronics Engineers (IEEE), 2011. p. 5 - 8.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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T2 - IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications

Y2 - 1 January 2011

ER -

A 2GHz GaN Class-J power amplifier for base station applications

Abstract

Conference

Bibliographical note

Keywords

Access to Document

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Projects

EPSRC/VCE STRATEGIC PARTNERSHIP: GREEN RADIO

Cite this