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The design and implementation of a high efficiency Class-J power amplifier (PA) for base station applications is reported. A commercially available 10 W GaN HEMT device was used, for which a large-signal model and an extrinsic parasitic model were available. Following Class-J theory, the needed harmonic terminations at the output of the transistor were defined and realised. Experimental results show good agreement with simulations verifying the class of operation. Efficiency above 70% is demonstrated with an output power of 39.7 dBm at an input drive of 29 dBm. High efficiency is sustained over a bandwidth of 140 MHz.
|Translated title of the contribution||A 2GHz GaN Class-J power amplifier for base station applications|
|Title of host publication||2011 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Pages||5 - 8|
|Publication status||Published - Jan 2011|
|Event||IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications - Phoenix, Arizona, United States|
Duration: 1 Jan 2011 → …
|Conference||IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications|
|Period||1/01/11 → …|
Bibliographical noteConference Proceedings/Title of Journal: IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)
Conference Organiser: IEEE
Rose publication type: Conference contribution
Additional information: With accompanying conference presentation and conference poster
Sponsorship: The authors would like to thank Michael Paynter for providing the extrinsic parasitics model and Cree Inc. for providing the devices used in this work. The work
reported in this paper has formed part of the Green Radio Research Programme of the Virtual Centre of Excellence in Mobile & Personal Communications, Mobile VCE,
www.mobilevce.com. Fully detailed technical reports on this research are available to Industrial Members of Mobile VCE.
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- Gallium compounds
- power amplifiers
- high electron mobility transistors