A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI

Harry C.P. Dymond, Jianjing Wang, Dawei Liu, Jeremy J.O. Dalton, Neville McNeill, Dinesh Pamunuwa, Simon J. Hollis, Bernard H. Stark*

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)

54 Citations (Scopus)
447 Downloads (Pure)

Abstract

Active gate driving has been demonstrated to beneficially shape switching waveforms in Si- and SiC-based power converters. For faster GaN power devices with sub-10-ns switching transients, however, reported variable gate driving has so far been limited to altering a single drive parameter once per switching event, either during or outside of the transient. This paper demonstrates a gate driver with a timing resolution and range of output resistance levels that surpass those of existing gate drivers or arbitrary waveform generators. It is shown to permit active gate driving with a bandwidth that is high enough to shape a GaN switching during the transient. The programmable gate driver has integrated high-speed memory, control logic, and multiple parallel output stages. During switching transients, the gate driver can activate a near-arbitrary sequence of pull-up or pull-down output resistances between 0.12 Ω and 64 Ω. A hybrid of clocked and asynchronous control logic with 150-ps delay elements achieves an effective resistance update rate of 6.7 GHz during switching events. This active gate driver is evaluated in a 1-MHz bridge-leg converter using EPC2015 GaN FETs. The results show that aggressive manipulation of the gate-drive resistance at sub-ns resolutions can profile gate waveforms of the GaN FET, and thereby beneficially shape the switch-node voltage waveform in the power circuit. Examples of open-loop active gate driving are demonstrated that maintain the low switching loss of constant-strength gate driving, whilst reducing overshoot, oscillation, and EMI-generating high-frequency spectral content.
Original languageEnglish
Article number7880639
Pages (from-to)581-594
Number of pages14
JournalIEEE Transactions on Power Electronics
Volume33
Issue number1
Early online date17 Mar 2017
DOIs
Publication statusPublished - Jan 2018

Keywords

  • Active gate driver
  • programmable gate resistance
  • gate signal profiling
  • GaN FETs
  • gate overshoot
  • oscillation
  • electromagnetic interference (EMI)

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    Dalton, J. J. O., Dymond, H. C. P., Liu, D., Mcneill, J. N., Pamunuwa, I. D. B., Wang, J., Hollis, S. & Stark, B. H.

    17/06/1316/06/18

    Project: Research

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