A CMOS-compatible heterogeneous 3-D integration platform for silicon nanoelectromechanical switches

Yingying Li; Simon J. Bleiker; Elliott Worsey; Mukesh Kumar Kulsreshath; Qi  Tang; Christian  Reich; Stefan  Ernst; Shyamprasad N.  Raja; August  Djuphammar; Kristinn b. Gylfason; I D B Pamunuwa; Frank Niklaus

doi:10.1109/LED.2026.3655495

A CMOS-compatible heterogeneous 3-D integration platform for silicon nanoelectromechanical switches

Yingying Li, Simon J. Bleiker, Elliott Worsey , Mukesh Kumar Kulsreshath, Qi Tang, Christian Reich, Stefan Ernst, Shyamprasad N. Raja, August Djuphammar, Kristinn b. Gylfason, I D B Pamunuwa, Frank Niklaus

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Abstract

Nanoelectromechanical (NEM) switches have near vertical turn-off transient, zero off-state leakage, and non-volatile behavior, ideal qualities for low power computing and memory applications. To realize this potential, large-scale integration of NEM switches is required. Here we introduce a three-dimensional (3-D) heterogeneous integration platform that leverages a standard silicon-on-insulator (SOI) CMOS foundry process, combined with post-processing of the foundry wafers to integrate silicon NEM switches. Within this platform, we seamlessly integrated both volatile 3-terminal (3-T) and non-volatile 7-terminal (7-T) NEM switches. We demonstrate successful electrical programming and reprogramming of both switch types, validating the platform’s functionality and its potential for constructing densely integrated NEM switch-based logic circuits and non-volatile memories.

Original language	English
Journal	IEEE Electron Device Letters
Early online date	19 Jan 2026
DOIs	https://doi.org/10.1109/LED.2026.3655495
Publication status	E-pub ahead of print - 19 Jan 2026

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© 1980-2012 IEEE.

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This is the accepted author manuscript (AAM) of the article which has been made Open Access under the University of Bristol's Scholarly Works Policy. The final published version (Version of Record) can be found on the publisher's website. The copyright of any third-party content, such as images, remains with the copyright holder.
Accepted author manuscript, 573 KBLicence: CC BY

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Li, Y., Bleiker, S. J., Worsey , E., Kulsreshath, M. K., Tang, Q., Reich, C., Ernst, S., Raja, S. N., Djuphammar, A., Gylfason, K. B., Pamunuwa, I. D. B., & Niklaus, F. (2026). A CMOS-compatible heterogeneous 3-D integration platform for silicon nanoelectromechanical switches. IEEE Electron Device Letters. Advance online publication. https://doi.org/10.1109/LED.2026.3655495

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title = "A CMOS-compatible heterogeneous 3-D integration platform for silicon nanoelectromechanical switches",

abstract = "Nanoelectromechanical (NEM) switches have near vertical turn-off transient, zero off-state leakage, and non-volatile behavior, ideal qualities for low power computing and memory applications. To realize this potential, large-scale integration of NEM switches is required. Here we introduce a three-dimensional (3-D) heterogeneous integration platform that leverages a standard silicon-on-insulator (SOI) CMOS foundry process, combined with post-processing of the foundry wafers to integrate silicon NEM switches. Within this platform, we seamlessly integrated both volatile 3-terminal (3-T) and non-volatile 7-terminal (7-T) NEM switches. We demonstrate successful electrical programming and reprogramming of both switch types, validating the platform{\textquoteright}s functionality and its potential for constructing densely integrated NEM switch-based logic circuits and non-volatile memories.",

author = "Yingying Li and Bleiker, \{Simon J.\} and Elliott Worsey and Kulsreshath, \{Mukesh Kumar\} and Qi Tang and Christian Reich and Stefan Ernst and Raja, \{Shyamprasad N.\} and August Djuphammar and Gylfason, \{Kristinn b.\} and Pamunuwa, \{I D B\} and Frank Niklaus",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2026",

month = jan,

day = "19",

doi = "10.1109/LED.2026.3655495",

language = "English",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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T1 - A CMOS-compatible heterogeneous 3-D integration platform for silicon nanoelectromechanical switches

AU - Li, Yingying

AU - Bleiker, Simon J.

AU - Worsey , Elliott

AU - Kulsreshath, Mukesh Kumar

AU - Tang, Qi

AU - Reich, Christian

AU - Ernst, Stefan

AU - Raja, Shyamprasad N.

AU - Djuphammar, August

AU - Gylfason, Kristinn b.

AU - Pamunuwa, I D B

AU - Niklaus, Frank

PY - 2026/1/19

Y1 - 2026/1/19

N2 - Nanoelectromechanical (NEM) switches have near vertical turn-off transient, zero off-state leakage, and non-volatile behavior, ideal qualities for low power computing and memory applications. To realize this potential, large-scale integration of NEM switches is required. Here we introduce a three-dimensional (3-D) heterogeneous integration platform that leverages a standard silicon-on-insulator (SOI) CMOS foundry process, combined with post-processing of the foundry wafers to integrate silicon NEM switches. Within this platform, we seamlessly integrated both volatile 3-terminal (3-T) and non-volatile 7-terminal (7-T) NEM switches. We demonstrate successful electrical programming and reprogramming of both switch types, validating the platform’s functionality and its potential for constructing densely integrated NEM switch-based logic circuits and non-volatile memories.

AB - Nanoelectromechanical (NEM) switches have near vertical turn-off transient, zero off-state leakage, and non-volatile behavior, ideal qualities for low power computing and memory applications. To realize this potential, large-scale integration of NEM switches is required. Here we introduce a three-dimensional (3-D) heterogeneous integration platform that leverages a standard silicon-on-insulator (SOI) CMOS foundry process, combined with post-processing of the foundry wafers to integrate silicon NEM switches. Within this platform, we seamlessly integrated both volatile 3-terminal (3-T) and non-volatile 7-terminal (7-T) NEM switches. We demonstrate successful electrical programming and reprogramming of both switch types, validating the platform’s functionality and its potential for constructing densely integrated NEM switch-based logic circuits and non-volatile memories.

U2 - 10.1109/LED.2026.3655495

DO - 10.1109/LED.2026.3655495

M3 - Article (Academic Journal)

SN - 0741-3106

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

A CMOS-compatible heterogeneous 3-D integration platform for silicon nanoelectromechanical switches

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