A comparison study between double and single gate p-IMOS

Faezeh Arab Hassani, M. Fathipour, M. Mehran

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

5 Citations (Scopus)


A double gate p-IMOS (DG p-IMOS) as well as a process definition for this device is proposed. Simulation studies show that at 400 (K) this device provides smaller subthreshold slope and threshold voltage than a single gate p-IMOS (SG p-IMOS). The ON/OFF current ratio for the DG p-IMOS is larger than that of an equivalent SG p-IMOS. Moreover, the double gate device has higher transconductance than the single gate device. The DG p-IMOS structural parameters affect its electrical characteristics. Reduction of the body thickness tends to lower threshold voltage and increase ON/OFF current ratio. Furthermore, for a given spacing between source and drain threshold voltage reduces as the gate length is increased.

Original languageEnglish
Title of host publicationIEEE AFRICON 2007
Place of PublicationWindhoek, South Africa
Publication statusPublished - 2007
EventIEEE AFRICON 2007 - Windhoek, South Africa
Duration: 26 Sep 200728 Sep 2007

Publication series

NameIEEE AFRICON Conference


ConferenceIEEE AFRICON 2007
CountrySouth Africa

Bibliographical note

Copyright 2011 Elsevier B.V., All rights reserved.


  • DG p-IMOS
  • Electrical characteristics
  • ON/OFF current ratio
  • Process definition
  • SG p-IMOS

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