A comparison study between double and single gate p-IMOS

Faezeh Arab Hassani, M. Fathipour, M. Mehran

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

5 Citations (Scopus)

Abstract

A double gate p-IMOS (DG p-IMOS) as well as a process definition for this device is proposed. Simulation studies show that at 400 (K) this device provides smaller subthreshold slope and threshold voltage than a single gate p-IMOS (SG p-IMOS). The ON/OFF current ratio for the DG p-IMOS is larger than that of an equivalent SG p-IMOS. Moreover, the double gate device has higher transconductance than the single gate device. The DG p-IMOS structural parameters affect its electrical characteristics. Reduction of the body thickness tends to lower threshold voltage and increase ON/OFF current ratio. Furthermore, for a given spacing between source and drain threshold voltage reduces as the gate length is increased.

Original languageEnglish
Title of host publicationIEEE AFRICON 2007
Place of PublicationWindhoek, South Africa
DOIs
Publication statusPublished - 2007
EventIEEE AFRICON 2007 - Windhoek, South Africa
Duration: 26 Sep 200728 Sep 2007

Publication series

NameIEEE AFRICON Conference

Conference

ConferenceIEEE AFRICON 2007
CountrySouth Africa
CityWindhoek
Period26/09/0728/09/07

Bibliographical note

Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.

Keywords

  • DG p-IMOS
  • Electrical characteristics
  • ON/OFF current ratio
  • Process definition
  • SG p-IMOS

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