A double gate p-IMOS (DG p-IMOS) as well as a process definition for this device is proposed. Simulation studies show that at 400 (K) this device provides smaller subthreshold slope and threshold voltage than a single gate p-IMOS (SG p-IMOS). The ON/OFF current ratio for the DG p-IMOS is larger than that of an equivalent SG p-IMOS. Moreover, the double gate device has higher transconductance than the single gate device. The DG p-IMOS structural parameters affect its electrical characteristics. Reduction of the body thickness tends to lower threshold voltage and increase ON/OFF current ratio. Furthermore, for a given spacing between source and drain threshold voltage reduces as the gate length is increased.
|Title of host publication||IEEE AFRICON 2007|
|Place of Publication||Windhoek, South Africa|
|Publication status||Published - 2007|
|Event||IEEE AFRICON 2007 - Windhoek, South Africa|
Duration: 26 Sep 2007 → 28 Sep 2007
|Name||IEEE AFRICON Conference|
|Conference||IEEE AFRICON 2007|
|Period||26/09/07 → 28/09/07|
Copyright 2011 Elsevier B.V., All rights reserved.
- DG p-IMOS
- Electrical characteristics
- ON/OFF current ratio
- Process definition
- SG p-IMOS