A comparison study between double and single gate p-IMOS

Faezeh Arab Hassani; M. Fathipour; M. Mehran

doi:10.1109/AFRCON.2007.4401526

A comparison study between double and single gate p-IMOS

Faezeh Arab Hassani, M. Fathipour, M. Mehran

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

5 Citations (Scopus)

Abstract

A double gate p-IMOS (DG p-IMOS) as well as a process definition for this device is proposed. Simulation studies show that at 400 (K) this device provides smaller subthreshold slope and threshold voltage than a single gate p-IMOS (SG p-IMOS). The ON/OFF current ratio for the DG p-IMOS is larger than that of an equivalent SG p-IMOS. Moreover, the double gate device has higher transconductance than the single gate device. The DG p-IMOS structural parameters affect its electrical characteristics. Reduction of the body thickness tends to lower threshold voltage and increase ON/OFF current ratio. Furthermore, for a given spacing between source and drain threshold voltage reduces as the gate length is increased.

Original language	English
Title of host publication	IEEE AFRICON 2007
Place of Publication	Windhoek, South Africa
DOIs	https://doi.org/10.1109/AFRCON.2007.4401526
Publication status	Published - 2007
Event	IEEE AFRICON 2007 - Windhoek, South Africa Duration: 26 Sept 2007 → 28 Sept 2007

Publication series

Name	IEEE AFRICON Conference

Conference

Conference	IEEE AFRICON 2007
Country/Territory	South Africa
City	Windhoek
Period	26/09/07 → 28/09/07

Bibliographical note

Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.

Research Groups and Themes

Photonics and Quantum

Keywords

DG p-IMOS
Electrical characteristics
ON/OFF current ratio
Process definition
SG p-IMOS

Access to Document

10.1109/AFRCON.2007.4401526

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title = "A comparison study between double and single gate p-IMOS",

abstract = "A double gate p-IMOS (DG p-IMOS) as well as a process definition for this device is proposed. Simulation studies show that at 400 (K) this device provides smaller subthreshold slope and threshold voltage than a single gate p-IMOS (SG p-IMOS). The ON/OFF current ratio for the DG p-IMOS is larger than that of an equivalent SG p-IMOS. Moreover, the double gate device has higher transconductance than the single gate device. The DG p-IMOS structural parameters affect its electrical characteristics. Reduction of the body thickness tends to lower threshold voltage and increase ON/OFF current ratio. Furthermore, for a given spacing between source and drain threshold voltage reduces as the gate length is increased.",

keywords = "DG p-IMOS, Electrical characteristics, ON/OFF current ratio, Process definition, SG p-IMOS",

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doi = "10.1109/AFRCON.2007.4401526",

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T1 - A comparison study between double and single gate p-IMOS

AU - Arab Hassani, Faezeh

AU - Fathipour, M.

AU - Mehran, M.

PY - 2007

Y1 - 2007

N2 - A double gate p-IMOS (DG p-IMOS) as well as a process definition for this device is proposed. Simulation studies show that at 400 (K) this device provides smaller subthreshold slope and threshold voltage than a single gate p-IMOS (SG p-IMOS). The ON/OFF current ratio for the DG p-IMOS is larger than that of an equivalent SG p-IMOS. Moreover, the double gate device has higher transconductance than the single gate device. The DG p-IMOS structural parameters affect its electrical characteristics. Reduction of the body thickness tends to lower threshold voltage and increase ON/OFF current ratio. Furthermore, for a given spacing between source and drain threshold voltage reduces as the gate length is increased.

AB - A double gate p-IMOS (DG p-IMOS) as well as a process definition for this device is proposed. Simulation studies show that at 400 (K) this device provides smaller subthreshold slope and threshold voltage than a single gate p-IMOS (SG p-IMOS). The ON/OFF current ratio for the DG p-IMOS is larger than that of an equivalent SG p-IMOS. Moreover, the double gate device has higher transconductance than the single gate device. The DG p-IMOS structural parameters affect its electrical characteristics. Reduction of the body thickness tends to lower threshold voltage and increase ON/OFF current ratio. Furthermore, for a given spacing between source and drain threshold voltage reduces as the gate length is increased.

KW - DG p-IMOS

KW - Electrical characteristics

KW - ON/OFF current ratio

KW - Process definition

KW - SG p-IMOS

UR - https://www.scopus.com/pages/publications/48649091970

U2 - 10.1109/AFRCON.2007.4401526

DO - 10.1109/AFRCON.2007.4401526

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:48649091970

SN - 142440987X

SN - 9781424409877

T3 - IEEE AFRICON Conference

BT - IEEE AFRICON 2007

CY - Windhoek, South Africa

T2 - IEEE AFRICON 2007

Y2 - 26 September 2007 through 28 September 2007

ER -

A comparison study between double and single gate p-IMOS

Abstract

Publication series

Conference

Bibliographical note

Research Groups and Themes

Keywords

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