A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy

C.T Foxon, S.V Novikov, J.L Hall, R.P Campion, D Cherns, I.J Griffiths, S Khongphetsak

Research output: Contribution to journalArticle (Academic Journal)peer-review

48 Citations (Scopus)
Translated title of the contributionA complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy
Original languageEnglish
Pages (from-to)3423 - 3427
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number13
DOIs
Publication statusPublished - Jun 2009

Cite this