A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy

C.T Foxon; S.V Novikov; J.L Hall; R.P Campion; D Cherns; I.J Griffiths; S Khongphetsak

doi:10.1016/j.jcrysgro.2009.04.021

A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy

C.T Foxon, S.V Novikov, J.L Hall, R.P Campion, D Cherns, I.J Griffiths, S Khongphetsak

Research output: Contribution to journal › Article (Academic Journal) › peer-review

61 Citations (Scopus)

Original language	English
Pages (from-to)	3423 - 3427
Number of pages	5
Journal	Journal of Crystal Growth
Volume	311
Issue number	13
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.04.021
Publication status	Published - Jun 2009

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10.1016/j.jcrysgro.2009.04.021

http://www.sciencedirect.com/science/article/pii/S0022024809004722

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@article{b70dd8923dff45168ac73dfb6a99e81e,

title = "A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy",

author = "C.T Foxon and S.V Novikov and J.L Hall and R.P Campion and D Cherns and I.J Griffiths and S Khongphetsak",

year = "2009",

month = jun,

doi = "10.1016/j.jcrysgro.2009.04.021",

language = "English",

volume = "311",

pages = "3423 -- 3427",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "13",

}

TY - JOUR

T1 - A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy

AU - Foxon, C.T

AU - Novikov, S.V

AU - Hall, J.L

AU - Campion, R.P

AU - Cherns, D

AU - Griffiths, I.J

AU - Khongphetsak, S

PY - 2009/6

Y1 - 2009/6

UR - https://www.scopus.com/pages/publications/66649102130

U2 - 10.1016/j.jcrysgro.2009.04.021

DO - 10.1016/j.jcrysgro.2009.04.021

M3 - Article (Academic Journal)

SN - 0022-0248

VL - 311

SP - 3423

EP - 3427

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 13

ER -

A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy

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GROWTH OF THICK AND FLAT HIGH QUALITY GaN USING NANO-COLUMN COMPLIANT LAYERS

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A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy

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GROWTH OF THICK AND FLAT HIGH QUALITY GaN USING NANO-COLUMN COMPLIANT LAYERS

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