Abstract

A deep etched 1D Distributed Bragg Reflector cavity in GaN-AlN-Sapphire has been analytically modeled and simulated using 2D FDTD. A structure fabricated using a hybrid Electron Beam- Focused Ion Beam method was assessed using microphotoluminescence.
Original languageEnglish
Pagespaper JW4A.75
Number of pages3
Publication statusPublished - 6 May 2012
EventCLEO: Applications and Technology (CLEO: A and T) - San Jose, California, United States
Duration: 6 May 20126 May 2012

Conference

ConferenceCLEO: Applications and Technology (CLEO: A and T)
CountryUnited States
CitySan Jose, California
Period6/05/126/05/12

Keywords

  • GaN
  • Photonics

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