Abstract
A deep etched 1D Distributed Bragg Reflector cavity in GaN-AlN-Sapphire has been analytically modeled and simulated using 2D FDTD. A structure fabricated using a hybrid Electron Beam- Focused Ion Beam method was assessed using microphotoluminescence.
Original language | English |
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Pages | paper JW4A.75 |
Number of pages | 3 |
Publication status | Published - 6 May 2012 |
Event | CLEO: Applications and Technology (CLEO: A and T) - San Jose, California, United States Duration: 6 May 2012 → 6 May 2012 |
Conference
Conference | CLEO: Applications and Technology (CLEO: A and T) |
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Country/Territory | United States |
City | San Jose, California |
Period | 6/05/12 → 6/05/12 |
Research Groups and Themes
- Photonics and Quantum
Keywords
- GaN
- Photonics