A scalable resonant gate drive circuit is described, suitable for driving series-connected MOSFETs in high-voltage, high-speed inverter applications for resistive and capacitive loads. Galvanic isolation is provided by a loop of high voltage wire, which also serves as the resonant inductor in the circuit. Fast dynamic voltage sharing is achieved by delivering equal current to each gate. A prototype is built and tested, demonstrating a 75ns switching time at 5kV using 900V MOSFETs.
|Translated title of the contribution||A Magnetically Isolated Gate Driver for High-Speed Voltage Sharing in Series-Connected MOSFETs|
|Title of host publication||14th European Conference on Power Electronics and Applications (EPE’11), Birmingham, UK|
|Publication status||Published - 2011|