Abstract
A scalable resonant gate drive circuit is described, suitable for driving series-connected MOSFETs in high-voltage, high-speed inverter applications for resistive and capacitive loads. Galvanic isolation is provided by a loop of high voltage wire, which also serves as the resonant inductor in the circuit. Fast dynamic voltage sharing is achieved by delivering equal current to each gate. A prototype is built and tested, demonstrating a 75ns switching time at 5kV using 900V MOSFETs.
| Translated title of the contribution | A Magnetically Isolated Gate Driver for High-Speed Voltage Sharing in Series-Connected MOSFETs |
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| Original language | English |
| Title of host publication | 14th European Conference on Power Electronics and Applications (EPE’11), Birmingham, UK |
| Publication status | Published - 2011 |