A model for the neutral donor bound exciton system in InP at high magnetic field

JM Rorison, D.C. Herbert, P.J. Dean, M.S. Skolnick

Research output: Contribution to journalArticle (Academic Journal)

17 Citations (Scopus)

Abstract

Well resolved structure in the neutral donor bound exciton (D0X) recombination in InP, observed at high magnetic fields and low temperatures, is presented. This structure is explained using a model of a donor bound exciton in a cubic semiconductor in a magnetic field in which p-like zero-field excited states are forced to lower energy than the s-like states which form the degenerate zero-field ground states. Account is taken of the degeneracy and anisotropy of the valence bands and diamagnetic effects in second-order perturbation theory. The selection rules for the electric dipole transitions for magnetic fields along the 〈100〉, 〈111〉 and 〈110〉 directions are found to be in good overall agreement with the observed donor bound exciton spectra in InP at magnetic fields of 9.7 T. High-magnetic field transitions of the (D0X) complex to both the 1s neutral donor final state, and to the 2s, 2p-1, 2p0 and 2p-1 excited states (the `two-electron' transitions) are analysed
Translated title of the contributionA model for the neutral donor bound exciton system in InP at high magnetic field
Original languageEnglish
Pages (from-to)6435 - 6453
Number of pages19
JournalJournal of Physics C (Solid State Physics)
Volume17 (35)
DOIs
Publication statusPublished - Dec 1984

Bibliographical note

Publisher: Institute of Physics

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