A new mechanism for strain relaxation in AlGaN/GaN epitaxial layers for UV lasers

D Cherns, S Sahonta, R Liu, FA Ponce, H Amano, I Akasaki

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Translated title of the contributionA new mechanism for strain relaxation in AlGaN/GaN epitaxial layers for UV lasers
Original languageEnglish
Title of host publicationInt. Conf. on Physics of Semiconductors ICPS-27, 2004, Flagstaff, USA
PublisherAmerican Physical Society (APS)
Number of pages2
Publication statusPublished - 2004

Bibliographical note

Conference Proceedings/Title of Journal: Proc. of ICPS 27
Conference Organiser: American Physical Society

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