A new mechanism for strain relaxation in AlGaN/GaN epitaxial layers for UV lasers

D Cherns, S Sahonta, R Liu, FA Ponce, H Amano, I Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Translated title of the contribution	A new mechanism for strain relaxation in AlGaN/GaN epitaxial layers for UV lasers
Original language	English
Title of host publication	Int. Conf. on Physics of Semiconductors ICPS-27, 2004, Flagstaff, USA
Publisher	American Physical Society (APS)
Number of pages	2
Publication status	Published - 2004

Conference Proceedings/Title of Journal: Proc. of ICPS 27
Conference Organiser: American Physical Society

Cite this

@inproceedings{1ae62007deee4fea9b04a4d8d26ef5f6,

title = "A new mechanism for strain relaxation in AlGaN/GaN epitaxial layers for UV lasers",

author = "D Cherns and S Sahonta and R Liu and FA Ponce and H Amano and I Akasaki",

note = "Conference Proceedings/Title of Journal: Proc. of ICPS 27 Conference Organiser: American Physical Society",

year = "2004",

language = "English",

booktitle = "Int. Conf. on Physics of Semiconductors ICPS-27, 2004, Flagstaff, USA",

publisher = "American Physical Society (APS)",

address = "United States",

}

Int. Conf. on Physics of Semiconductors ICPS-27, 2004, Flagstaff, USA. American Physical Society (APS), 2004.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - A new mechanism for strain relaxation in AlGaN/GaN epitaxial layers for UV lasers

AU - Cherns, D

AU - Sahonta, S

AU - Liu, R

AU - Ponce, FA

AU - Amano, H

AU - Akasaki, I

N1 - Conference Proceedings/Title of Journal: Proc. of ICPS 27 Conference Organiser: American Physical Society

PY - 2004

Y1 - 2004

M3 - Conference Contribution (Conference Proceeding)

BT - Int. Conf. on Physics of Semiconductors ICPS-27, 2004, Flagstaff, USA

PB - American Physical Society (APS)

ER -