The memristor is one among the most promising emerging technologies for enabling a new generation of Non Volatile Memories. The memristor operates faster than a Phase Change Memory (PCRAM) and has a simpler structure than a magnetic memory (MRAM), while making possible the design of cross-point structures in crossbars at very high density. The presence of sneak path currents however causes an increase in power consumption and a reduction in data integrity and performance. To overcome this issue a novel write method is proposed to reduce the effects of sneak paths. Extensive SPICE simulations are provided to evidence the advantages of the proposed method.
|Title of host publication||Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012|
|Number of pages||6|
|Publication status||Published - 1 Dec 2012|
|Event||2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012 - Amsterdam, United Kingdom|
Duration: 4 Jul 2012 → 6 Jul 2012
|Conference||2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012|
|Period||4/07/12 → 6/07/12|