A novel write-scheme for data integrity in memristor-based crossbar memories

Angelo Giuseppe Ruotolo; Marco Ottavi; Salvatore Pontarelli; Fabrizio Lombardi

A novel write-scheme for data integrity in memristor-based crossbar memories

Angelo Giuseppe Ruotolo^*, Marco Ottavi, Salvatore Pontarelli, Fabrizio Lombardi

^*Corresponding author for this work

Department of Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

7 Citations (Scopus)

Abstract

The memristor is one among the most promising emerging technologies for enabling a new generation of Non Volatile Memories. The memristor operates faster than a Phase Change Memory (PCRAM) and has a simpler structure than a magnetic memory (MRAM), while making possible the design of cross-point structures in crossbars at very high density. The presence of sneak path currents however causes an increase in power consumption and a reduction in data integrity and performance. To overcome this issue a novel write method is proposed to reduce the effects of sneak paths. Extensive SPICE simulations are provided to evidence the advantages of the proposed method.

Original language	English
Title of host publication	Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012
Pages	168-173
Number of pages	6
Publication status	Published - 1 Dec 2012
Event	2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012 - Amsterdam, United Kingdom Duration: 4 Jul 2012 → 6 Jul 2012

Conference

Conference	2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012
Country/Territory	United Kingdom
City	Amsterdam
Period	4/07/12 → 6/07/12

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@inproceedings{1053a75757ca4dbfb4507c6eb23147d9,

title = "A novel write-scheme for data integrity in memristor-based crossbar memories",

abstract = "The memristor is one among the most promising emerging technologies for enabling a new generation of Non Volatile Memories. The memristor operates faster than a Phase Change Memory (PCRAM) and has a simpler structure than a magnetic memory (MRAM), while making possible the design of cross-point structures in crossbars at very high density. The presence of sneak path currents however causes an increase in power consumption and a reduction in data integrity and performance. To overcome this issue a novel write method is proposed to reduce the effects of sneak paths. Extensive SPICE simulations are provided to evidence the advantages of the proposed method.",

author = "Ruotolo, {Angelo Giuseppe} and Marco Ottavi and Salvatore Pontarelli and Fabrizio Lombardi",

year = "2012",

month = dec,

day = "1",

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pages = "168--173",

booktitle = "Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012",

note = "2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012 ; Conference date: 04-07-2012 Through 06-07-2012",

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Ruotolo, AG, Ottavi, M, Pontarelli, S & Lombardi, F 2012, A novel write-scheme for data integrity in memristor-based crossbar memories. in Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012., 6464159, pp. 168-173, 2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012, Amsterdam, United Kingdom, 4/07/12.

A novel write-scheme for data integrity in memristor-based crossbar memories. / Ruotolo, Angelo Giuseppe; Ottavi, Marco; Pontarelli, Salvatore et al.
Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012. 2012. p. 168-173 6464159.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - A novel write-scheme for data integrity in memristor-based crossbar memories

AU - Ruotolo, Angelo Giuseppe

AU - Ottavi, Marco

AU - Pontarelli, Salvatore

AU - Lombardi, Fabrizio

PY - 2012/12/1

Y1 - 2012/12/1

N2 - The memristor is one among the most promising emerging technologies for enabling a new generation of Non Volatile Memories. The memristor operates faster than a Phase Change Memory (PCRAM) and has a simpler structure than a magnetic memory (MRAM), while making possible the design of cross-point structures in crossbars at very high density. The presence of sneak path currents however causes an increase in power consumption and a reduction in data integrity and performance. To overcome this issue a novel write method is proposed to reduce the effects of sneak paths. Extensive SPICE simulations are provided to evidence the advantages of the proposed method.

AB - The memristor is one among the most promising emerging technologies for enabling a new generation of Non Volatile Memories. The memristor operates faster than a Phase Change Memory (PCRAM) and has a simpler structure than a magnetic memory (MRAM), while making possible the design of cross-point structures in crossbars at very high density. The presence of sneak path currents however causes an increase in power consumption and a reduction in data integrity and performance. To overcome this issue a novel write method is proposed to reduce the effects of sneak paths. Extensive SPICE simulations are provided to evidence the advantages of the proposed method.

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M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:84874770881

SN - 9781450316712

SP - 168

EP - 173

BT - Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012

T2 - 2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012

Y2 - 4 July 2012 through 6 July 2012

ER -

A novel write-scheme for data integrity in memristor-based crossbar memories

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