A novel write-scheme for data integrity in memristor-based crossbar memories

Angelo Giuseppe Ruotolo*, Marco Ottavi, Salvatore Pontarelli, Fabrizio Lombardi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

3 Citations (Scopus)

Abstract

The memristor is one among the most promising emerging technologies for enabling a new generation of Non Volatile Memories. The memristor operates faster than a Phase Change Memory (PCRAM) and has a simpler structure than a magnetic memory (MRAM), while making possible the design of cross-point structures in crossbars at very high density. The presence of sneak path currents however causes an increase in power consumption and a reduction in data integrity and performance. To overcome this issue a novel write method is proposed to reduce the effects of sneak paths. Extensive SPICE simulations are provided to evidence the advantages of the proposed method.

Original languageEnglish
Title of host publicationProceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012
Pages168-173
Number of pages6
Publication statusPublished - 1 Dec 2012
Event2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012 - Amsterdam, United Kingdom
Duration: 4 Jul 20126 Jul 2012

Conference

Conference2012 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2012
CountryUnited Kingdom
CityAmsterdam
Period4/07/126/07/12

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