A numerical design of high-resistance and energy-efficient HTS switch based on dynamic resistance

Dynamic resistance effect introduces dissipative loss to the type-II high T c superconductors, which is initially considered as a disadvantage for superconductors when it was first discovered. However, in some cases “dynamic resistance”, a unique effect, can be effectively exploited. Based on the dynamic resistance effect, the AC-magnetic-field-actuated high temperature superconducting (HTS) power switch is developed. It is the key component in the HTS transformer-rectifier flux pump (TRFP). The operating characteristics of power switch are vital to the performance and reliability of the transformer rectifier flux pump. In this paper, we compare three designs of HTS power switch with different stabilizer structures: striated stabilizer layers with wide and narrow strips as well as original non-striated stabilizer layers. The performance of HTS power switch is evaluated by several criteria, including off-state voltage and resistance, temperature rise, power loss, and energy conversion efficiency. This study will help design high-performance, low-loss, and energy-efficient HTS power switch based on “dynamic resistance” effect.