A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

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Abstract

We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device technology, including for accelerated lifetime reliability testing and device design optimization. Its practical use is illustrated for GaN and GaAs-based high electron mobility transistors and opto-electronic devices. We also discuss how Raman thermography is used to validate device thermal models, as well as determining the thermal conductivity of materials relevant for electronic and opto-electronic devices.
Original languageEnglish
Pages (from-to)667-684
Number of pages18
JournalIEEE Transactions on Device and Materials Reliability
Volume16
Issue number4
Early online date13 Oct 2016
DOIs
Publication statusPublished - 2 Dec 2016

Structured keywords

  • CDTR

Keywords

  • HEMTs
  • Optoelectronic devices
  • Semiconductor device measurement
  • Spatial resolution
  • Temperature
  • Temperature measurement
  • Wavelength measurement
  • GaAs
  • GaN
  • HEMT
  • Thermography
  • reliability
  • thermal management
  • thermal simulation

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