A Review of Short Circuit Performance in 650 V Power Devices: SiC MOSFETs, Silicon Super-junction MOSFETs, SiC Cascode JFETs, Silicon MOSFETs and Silicon IGBTs

Erfan Bashar, Nereus Agbo, Ruizhu Wu, Simon Mendy, Saeed Jahdi, Michael Jennings, Andy Withey, Sam Evans, Gareth Davies, Jana Demitrova, Jose Ortiz Gonzalez, Olayiwola Alatise*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

2 Citations (Scopus)
15 Downloads (Pure)

Abstract

Using measurements, a comprehensive analysis is performed on the short circuit (SC) performance and robustness of 650V power devices including SiC MOSFETs, SiC Cascode JFETs, silicon Super-Junction, silicon IGBTs and silicon MOSFETs. The peak SC current, the SC energy density (in mJ/mm2) and the SC withstand time (SCWT) have been measured for all devices using a DC link voltage of 400 V at 25°C, 75°C and 150°C. Results show that the SCWT increases with temperature in the silicon and super-junction MOSFETs, reduces with temperature in SiC MOSFETs and is temperature invariant in the SiC Cascode JFET. SiC devices have higher SC energy density than silicon devices, lower peak currents and are more temperature invariant. While the SiC MOSFETs fail in gate-source shorts with the source-drain still blocking voltage, the SiC Cascode JFET mostly fails in drain-source shorts with the gate still functional. All other devices (IGBT, super-junction MOSFET and silicon MOSFET) fail with both source-drain shorts and gate-source shorts. Only the SiC MOSFETs demonstrate increased gate leakage (indicated by reduced gate voltage) during the short circuit transient.

Original languageEnglish
Title of host publicationPCIM Europe 2022
Subtitle of host publicationInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
PublisherVDE Verlag
Pages1167-1174
Number of pages8
ISBN (Print)9783800758227
DOIs
Publication statusPublished - 19 Aug 2022
EventInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022 - Nuremberg, Germany
Duration: 10 May 202212 May 2022

Publication series

NamePCIM Europe Conference Proceedings
ISSN (Electronic)2191-3358

Conference

ConferenceInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022
Country/TerritoryGermany
CityNuremberg
Period10/05/2212/05/22

Bibliographical note

Funding Information:
This work was supported by the UK EPSRC through the grant Reliability, Condition Monitoring and Health Management Technologies for WBG Power Modules (EP/R004366/1).

Publisher Copyright:
© VDE VERLAG GMBH, Berlin, Offenbach.

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