A short carrier lifetime semiconductor optical amplifier with n-type modulation-doped multiple quantum well structure

R. Zhang, F. Zhou, J. Bian, L. Zhao, S. Jian, S Yu

Research output: Contribution to journalArticle (Academic Journal)peer-review

4 Citations (Scopus)

Abstract

Semiconductor optical amplifiers (SOAs) with n-type modulation-doped multiple quantum well structure have been investigated. The shortened carrier lifetime is derived from the PL spectrum and electrical modulation frequency response measurement. The carrier lifetime in semiconductor optical amplifiers with any n-type-2-modulated doping multiple quantum well structure is less than 60% of that in the undoped partner. The shortest measured carrier lifetime of 236 ps in the MD-MQW SOA with sheet carrier density of 3 × 1012 cm-2 was only 38% of that in the undoped MQW SOA, which can increase the wavelength conversion efficiency via four wave mixing by a factor of about 7 and switching speed via XGM and XPM applications by a factor of 2.63. © 2007 IOP Publishing Ltd.
Translated title of the contributionA short carrier lifetime semiconductor optical amplifier with n-type modulation-doped multiple quantum well structure
Original languageEnglish
Pages (from-to)283 - 286
Number of pages4
JournalSemiconductor Science and Technology
Volume22 (3)
DOIs
Publication statusPublished - Mar 2007

Bibliographical note

Publisher: Institute of Physics Publishing

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