a-Si nanolayer induced enhancement of the 1.53 μm photoluminescence in Er3+ doped a- Al2O3 thin films

J. Toudert, S. Núñez-Sánchez, M. Jiḿnez De Castro, R. Serna*

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

12 Citations (Scopus)

Abstract

A structured film formed by an active Er3+ -doped amorphous Al2 O3 layer located between two amorphous silicon nanolayers (NLs) in as-grown conditions shows an enhancement of the photoluminescence (PL) intensity and lifetime at 1.53 μm of one order of magnitude when compared to a similar Er3+ -doped film without silicon NLs. The film can be pumped even under nonresonant excitation conditions as a result of a long range energy transfer from the a-Si NLs to the Er3+ ions. In addition, the PL shows a single exponential decay with a lifetime value as high as 2.4 ms. The lifetime enhancement is associated with an improvement of the emission efficiency of the Er3+ ions.

Original languageEnglish
Article number121111
JournalApplied Physics Letters
Volume92
Issue number12
DOIs
Publication statusPublished - 2008

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