a-Si nanolayer induced enhancement of the 1.53 μm photoluminescence in Er3+ doped a- Al2O3 thin films

J. Toudert; S. Núñez-Sánchez; M. Jiḿnez De Castro; R. Serna

doi:10.1063/1.2900662

a-Si nanolayer induced enhancement of the 1.53 μm photoluminescence in Er3+ doped a- Al2O3 thin films

J. Toudert, S. Núñez-Sánchez, M. Jiḿnez De Castro, R. Serna^*

^*Corresponding author for this work

Department of Electrical & Electronic Engineering

Research output: Contribution to journal › Article (Academic Journal) › peer-review

12 Citations (Scopus)

Abstract

A structured film formed by an active Er3+ -doped amorphous Al2 O3 layer located between two amorphous silicon nanolayers (NLs) in as-grown conditions shows an enhancement of the photoluminescence (PL) intensity and lifetime at 1.53 μm of one order of magnitude when compared to a similar Er3+ -doped film without silicon NLs. The film can be pumped even under nonresonant excitation conditions as a result of a long range energy transfer from the a-Si NLs to the Er3+ ions. In addition, the PL shows a single exponential decay with a lifetime value as high as 2.4 ms. The lifetime enhancement is associated with an improvement of the emission efficiency of the Er3+ ions.

Original language	English
Article number	121111
Journal	Applied Physics Letters
Volume	92
Issue number	12
DOIs	https://doi.org/10.1063/1.2900662
Publication status	Published - 2008

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title = "a-Si nanolayer induced enhancement of the 1.53 μm photoluminescence in Er3+ doped a- Al2O3 thin films",

abstract = "A structured film formed by an active Er3+ -doped amorphous Al2 O3 layer located between two amorphous silicon nanolayers (NLs) in as-grown conditions shows an enhancement of the photoluminescence (PL) intensity and lifetime at 1.53 μm of one order of magnitude when compared to a similar Er3+ -doped film without silicon NLs. The film can be pumped even under nonresonant excitation conditions as a result of a long range energy transfer from the a-Si NLs to the Er3+ ions. In addition, the PL shows a single exponential decay with a lifetime value as high as 2.4 ms. The lifetime enhancement is associated with an improvement of the emission efficiency of the Er3+ ions.",

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journal = "Applied Physics Letters",

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T1 - a-Si nanolayer induced enhancement of the 1.53 μm photoluminescence in Er3+ doped a- Al2O3 thin films

AU - Toudert, J.

AU - Núñez-Sánchez, S.

AU - Jiḿnez De Castro, M.

AU - Serna, R.

PY - 2008

Y1 - 2008

N2 - A structured film formed by an active Er3+ -doped amorphous Al2 O3 layer located between two amorphous silicon nanolayers (NLs) in as-grown conditions shows an enhancement of the photoluminescence (PL) intensity and lifetime at 1.53 μm of one order of magnitude when compared to a similar Er3+ -doped film without silicon NLs. The film can be pumped even under nonresonant excitation conditions as a result of a long range energy transfer from the a-Si NLs to the Er3+ ions. In addition, the PL shows a single exponential decay with a lifetime value as high as 2.4 ms. The lifetime enhancement is associated with an improvement of the emission efficiency of the Er3+ ions.

AB - A structured film formed by an active Er3+ -doped amorphous Al2 O3 layer located between two amorphous silicon nanolayers (NLs) in as-grown conditions shows an enhancement of the photoluminescence (PL) intensity and lifetime at 1.53 μm of one order of magnitude when compared to a similar Er3+ -doped film without silicon NLs. The film can be pumped even under nonresonant excitation conditions as a result of a long range energy transfer from the a-Si NLs to the Er3+ ions. In addition, the PL shows a single exponential decay with a lifetime value as high as 2.4 ms. The lifetime enhancement is associated with an improvement of the emission efficiency of the Er3+ ions.

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U2 - 10.1063/1.2900662

DO - 10.1063/1.2900662

M3 - Article (Academic Journal)

AN - SCOPUS:41349122875

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 121111

ER -

a-Si nanolayer induced enhancement of the 1.53 μm photoluminescence in Er3+ doped a- Al2O3 thin films

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