A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy

A Bell, I Harrison, D Korakakis, EC Larkins, JM Hayes, MHH Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

Translated title of the contributionA study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy
Original languageEnglish
Pages (from-to)655 - 660
JournalMRS Internet J. Nitride Semicond. Res. Supplement 1
Volume5
Publication statusPublished - 2000

Bibliographical note

Publisher: Materials Research Society

Structured keywords

  • CDTR

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