A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Translated title of the contribution	A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy
Original language	English
Pages (from-to)	655 - 660
Journal	MRS Internet J. Nitride Semicond. Res. Supplement 1
Volume	5
Publication status	Published - 2000

Publisher: Materials Research Society

Research Groups and Themes

@article{169b13b8d72346dda72e88179f19cd4a,

title = "A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy",

author = "A Bell and I Harrison and D Korakakis and EC Larkins and JM Hayes and MHH Kuball",

note = "Publisher: Materials Research Society",

year = "2000",

language = "English",

volume = "5",

pages = "655 -- 660",

journal = "MRS Internet J. Nitride Semicond. Res. Supplement 1",

issn = "1092-5783",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy

AU - Bell, A

AU - Harrison, I

AU - Korakakis, D

AU - Larkins, EC

AU - Hayes, JM

AU - Kuball, MHH

N1 - Publisher: Materials Research Society

PY - 2000

Y1 - 2000

M3 - Article (Academic Journal)

SN - 1092-5783

VL - 5

SP - 655

EP - 660

JO - MRS Internet J. Nitride Semicond. Res. Supplement 1

JF - MRS Internet J. Nitride Semicond. Res. Supplement 1

ER -