A Sub-Nanosecond Gate Bias-Switching Circuit for GaN RF Power Amplifiers

Jiteng Ma*, Gavin T Watkins, Mark A Beach, Tommaso Cappello

*Corresponding author for this work

Research output: Contribution to journalLetter (Academic Journal)peer-review

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Abstract

In this letter, we present a design of a fast gate-switching power amplifier (GSPA) aimed at reducing its power consumption. This GSPA features a dedicated fast gate-switching circuit that commutates the gallium nitride (GaN) transistor between a nominal gate bias voltage (GSPA ON) and a strong negative voltage (GSPA OFF), thereby generating two discrete output power levels in an RF-pulsewidth modulation (PWM) fashion. A fast gate-switching circuit, including a commercial digital voltage isolator, is designed to switch between two gate bias voltages. The gate stability resistor and transmission line (TL) are carefully placed and designed to reduce the GSPA parasitic bias line and enable fast switching. Measured results provided a rise and fall time of 750 and 950 ps, respectively, and achieved RF pulsewidths as narrow as 5.88 ns, thus corresponding to a 170-MHz bandwidth.
Original languageEnglish
Pages (from-to)207-210
Number of pages4
JournalIEEE Microwave and Wireless Components Letters
Volume34
Issue number2
Early online date1 Jan 2024
DOIs
Publication statusPublished - 13 Feb 2024

Bibliographical note

Publisher Copyright:
© 2024 IEEE.

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