A temperature analysis of high-power AlGaN/GaN HEMTs

J Das, H Oprins, W Ruythooren, J Derluyn, M Germain, G Borghs, H Ji, A Sarua, M Kuball

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)


Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding performance combined together with low cost and high flexibility can be obtained using a System-in-a-Package (SIP) approach. Since thermal management is extremely important for these high power applications, a hybrid integration of the HEMT onto an AlN carrier substrate is proposed. In this study we investigate the temperature performance for AlGaN/GaN HEMTs integrated onto AlN using flip-chip mounting. Therefore, we use thermal simulations in combination with experimental results using micro-Raman spectroscopy and electrical dc-analysis.
Translated title of the contributionA temperature analysis of high-power AlGaN/GaN HEMTs
Original languageEnglish
Title of host publicationTherminic, Nice, France, 2006
PublisherTima Editions
Pages38 - 41
Number of pages4
Publication statusPublished - 2006

Bibliographical note

Conference Proceedings/Title of Journal: Proceedings of 12th Workshop on Thermal Investigations of ICs and Systems 1028
Conference Organiser: IEEE and TIMA Laboratory

Structured keywords

  • CDTR


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