A temperature analysis of high-power AlGaN/GaN HEMTs

J Das; H Oprins; W Ruythooren; J Derluyn; M Germain; G Borghs; H Ji; A Sarua; M Kuball

A temperature analysis of high-power AlGaN/GaN HEMTs

J Das
, H Oprins
, W Ruythooren
, J Derluyn
, M Germain
, G Borghs
, H Ji
, A Sarua
, M Kuball

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding performance combined together with low cost and high flexibility can be obtained using a System-in-a-Package (SIP) approach. Since thermal management is extremely important for these high power applications, a hybrid integration of the HEMT onto an AlN carrier substrate is proposed. In this study we investigate the temperature performance for AlGaN/GaN HEMTs integrated onto AlN using flip-chip mounting. Therefore, we use thermal simulations in combination with experimental results using micro-Raman spectroscopy and electrical dc-analysis.

Translated title of the contribution	A temperature analysis of high-power AlGaN/GaN HEMTs
Original language	English
Title of host publication	Therminic, Nice, France, 2006
Publisher	Tima Editions
Pages	38 - 41
Number of pages	4
Publication status	Published - 2006

Bibliographical note

Conference Proceedings/Title of Journal: Proceedings of 12th Workshop on Thermal Investigations of ICs and Systems 1028
Conference Organiser: IEEE and TIMA Laboratory

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@inproceedings{69ca9b9954424af6bf81b6c50457ceba,

title = "A temperature analysis of high-power AlGaN/GaN HEMTs",

abstract = "Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding performance combined together with low cost and high flexibility can be obtained using a System-in-a-Package (SIP) approach. Since thermal management is extremely important for these high power applications, a hybrid integration of the HEMT onto an AlN carrier substrate is proposed. In this study we investigate the temperature performance for AlGaN/GaN HEMTs integrated onto AlN using flip-chip mounting. Therefore, we use thermal simulations in combination with experimental results using micro-Raman spectroscopy and electrical dc-analysis.",

author = "J Das and H Oprins and W Ruythooren and J Derluyn and M Germain and G Borghs and H Ji and A Sarua and M Kuball",

note = "Conference Proceedings/Title of Journal: Proceedings of 12th Workshop on Thermal Investigations of ICs and Systems 1028 Conference Organiser: IEEE and TIMA Laboratory",

year = "2006",

language = "English",

pages = "38 -- 41",

booktitle = "Therminic, Nice, France, 2006",

publisher = "Tima Editions",

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TY - GEN

T1 - A temperature analysis of high-power AlGaN/GaN HEMTs

AU - Das, J

AU - Oprins, H

AU - Ruythooren, W

AU - Derluyn, J

AU - Germain, M

AU - Borghs, G

AU - Ji, H

AU - Sarua, A

AU - Kuball, M

N1 - Conference Proceedings/Title of Journal: Proceedings of 12th Workshop on Thermal Investigations of ICs and Systems 1028 Conference Organiser: IEEE and TIMA Laboratory

PY - 2006

Y1 - 2006

N2 - Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding performance combined together with low cost and high flexibility can be obtained using a System-in-a-Package (SIP) approach. Since thermal management is extremely important for these high power applications, a hybrid integration of the HEMT onto an AlN carrier substrate is proposed. In this study we investigate the temperature performance for AlGaN/GaN HEMTs integrated onto AlN using flip-chip mounting. Therefore, we use thermal simulations in combination with experimental results using micro-Raman spectroscopy and electrical dc-analysis.

AB - Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding performance combined together with low cost and high flexibility can be obtained using a System-in-a-Package (SIP) approach. Since thermal management is extremely important for these high power applications, a hybrid integration of the HEMT onto an AlN carrier substrate is proposed. In this study we investigate the temperature performance for AlGaN/GaN HEMTs integrated onto AlN using flip-chip mounting. Therefore, we use thermal simulations in combination with experimental results using micro-Raman spectroscopy and electrical dc-analysis.

M3 - Conference Contribution (Conference Proceeding)

SP - 38

EP - 41

BT - Therminic, Nice, France, 2006

PB - Tima Editions

ER -

A temperature analysis of high-power AlGaN/GaN HEMTs

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