A trapping tolerant drain current based temperature measurement of β-Ga2O3 MOSFETs

Xiang Zheng; Taylor Moule; James W Pomeroy; Masataka  Higashiwaki; Martin Kuball

doi:10.1063/5.0069655

A trapping tolerant drain current based temperature measurement of β-Ga₂O₃ MOSFETs

Xiang Zheng, Taylor Moule, James W Pomeroy, Masataka Higashiwaki, Martin Kuball^*

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

8 Citations (Scopus)

Abstract

The drain current temperature dependence is an efficient way to determine the channel temperature in semiconductor devices; however, it has been challenging to use due to the potential interference of trapping effects. A trapping tolerant method is proposed, illustrated here for Ga₂O₃ MOSFETs, making in situ temperature measurements possible, allowing a thermal resistance of 59 K·mm/W to be measured in Ga₂O₃ MOSFETs. However, neglecting the effect of trapping causes an error of ∼15% in the channel temperature measured using the drain current. 3D simulations show that the measured channel temperature is the average temperature value between source and drain contact.

Original language	English
Article number	073502
Number of pages	4
Journal	Applied Physics Letters
Volume	120
Issue number	7
DOIs	https://doi.org/10.1063/5.0069655
Publication status	Published - 14 Feb 2022

Bibliographical note

This work was supported as part of ULTRA, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award No. DESC0021230. In addition, M.K.’s position was supported by the Royal Academy of Engineering under the Chair in Emerging Technologies scheme. The authors thank M. J. Uren (Bristol) for fruitful discussions.

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Cite this

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abstract = "The drain current temperature dependence is an efficient way to determine the channel temperature in semiconductor devices; however, it has been challenging to use due to the potential interference of trapping effects. A trapping tolerant method is proposed, illustrated here for Ga2O3 MOSFETs, making in situ temperature measurements possible, allowing a thermal resistance of 59 K·mm/W to be measured in Ga2O3 MOSFETs. However, neglecting the effect of trapping causes an error of ∼15% in the channel temperature measured using the drain current. 3D simulations show that the measured channel temperature is the average temperature value between source and drain contact.",

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AU - Moule, Taylor

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AU - Higashiwaki, Masataka

AU - Kuball, Martin

N1 - This work was supported as part of ULTRA, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award No. DESC0021230. In addition, M.K.’s position was supported by the Royal Academy of Engineering under the Chair in Emerging Technologies scheme. The authors thank M. J. Uren (Bristol) for fruitful discussions.

PY - 2022/2/14

Y1 - 2022/2/14

N2 - The drain current temperature dependence is an efficient way to determine the channel temperature in semiconductor devices; however, it has been challenging to use due to the potential interference of trapping effects. A trapping tolerant method is proposed, illustrated here for Ga2O3 MOSFETs, making in situ temperature measurements possible, allowing a thermal resistance of 59 K·mm/W to be measured in Ga2O3 MOSFETs. However, neglecting the effect of trapping causes an error of ∼15% in the channel temperature measured using the drain current. 3D simulations show that the measured channel temperature is the average temperature value between source and drain contact.

AB - The drain current temperature dependence is an efficient way to determine the channel temperature in semiconductor devices; however, it has been challenging to use due to the potential interference of trapping effects. A trapping tolerant method is proposed, illustrated here for Ga2O3 MOSFETs, making in situ temperature measurements possible, allowing a thermal resistance of 59 K·mm/W to be measured in Ga2O3 MOSFETs. However, neglecting the effect of trapping causes an error of ∼15% in the channel temperature measured using the drain current. 3D simulations show that the measured channel temperature is the average temperature value between source and drain contact.

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DO - 10.1063/5.0069655

M3 - Article (Academic Journal)

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A trapping tolerant drain current based temperature measurement of β-Ga2O3 MOSFETs