A trapping tolerant drain current based temperature measurement of β-Ga2O3 MOSFETs

Xiang Zheng, Taylor Moule, James W Pomeroy, Masataka Higashiwaki, Martin Kuball*

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

4 Citations (Scopus)

Abstract

The drain current temperature dependence is an efficient way to determine the channel temperature in semiconductor devices; however, it has been challenging to use due to the potential interference of trapping effects. A trapping tolerant method is proposed, illustrated here for Ga2O3 MOSFETs, making in situ temperature measurements possible, allowing a thermal resistance of 59 K·mm/W to be measured in Ga2O3 MOSFETs. However, neglecting the effect of trapping causes an error of ∼15% in the channel temperature measured using the drain current. 3D simulations show that the measured channel temperature is the average temperature value between source and drain contact.
Original languageEnglish
Article number073502
Number of pages4
JournalApplied Physics Letters
Volume120
Issue number7
DOIs
Publication statusPublished - 14 Feb 2022

Bibliographical note

This work was supported as part of ULTRA, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award No. DESC0021230. In addition, M.K.’s position was supported by the Royal Academy of Engineering under the Chair in Emerging Technologies scheme. The authors thank M. J. Uren (Bristol) for fruitful discussions.

Structured keywords

  • CDTR

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