In this paper, we present the design, fabrication and measurement of gallium nitride (GaN) Distributed Bragg Reflector (DBR) cavities integrated with input and output grating couplers. The devices are fabricated using a new, low cost nanolithography technique: Displacement Talbot Lithography (DTL) combined with Direct Laser Writing (DLW) lithography. The finite difference time-domain (FDTD) method has been used to design all the components and measured and modelled results show good agreement. Such devices have applications in GaN integrated photonics and biosensing.
- Bristol Quantum Information Institute
- Photonics and Quantum