Abstract
In this paper, we present the design, fabrication and measurement of gallium nitride (GaN) Distributed Bragg Reflector (DBR) cavities integrated with input and output grating couplers. The devices are fabricated using a new, low cost nanolithography technique: Displacement Talbot Lithography (DTL) combined with Direct Laser Writing (DLW) lithography. The finite difference time-domain (FDTD) method has been used to design all the components and measured and modelled results show good agreement. Such devices have applications in GaN integrated photonics and biosensing.
Original language | English |
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Number of pages | 7 |
Journal | Nano-Micro Letters |
Volume | 14 |
Issue number | 13 |
Early online date | 11 Nov 2019 |
DOIs | |
Publication status | Published - 20 Nov 2019 |
Structured keywords
- Bristol Quantum Information Institute
- QETLabs