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A Waveguide Integrated GaN Distributed Bragg Reflector Cavity Using Low Cost Nanolithography

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Original languageEnglish
Number of pages7
JournalNano-Micro Letters
Issue number13
Early online date11 Nov 2019
DateAccepted/In press - 1 Sep 2019
DateE-pub ahead of print - 11 Nov 2019
DatePublished (current) - 20 Nov 2019


In this paper, we present the design, fabrication and measurement of gallium nitride (GaN) Distributed Bragg Reflector (DBR) cavities integrated with input and output grating couplers. The devices are fabricated using a new, low cost nanolithography technique: Displacement Talbot Lithography (DTL) combined with Direct Laser Writing (DLW) lithography. The finite difference time-domain (FDTD) method has been used to design all the components and measured and modelled results show good agreement. Such devices have applications in GaN integrated photonics and biosensing.

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