Ab initio calculation on atomic structure and charge transfer of silicon oxycarbide (SiOxCy) at the SiC/SiO2 interface

Ab initio calculation on atomic structure and charge transfer of silicon oxycarbide (SiO_xC_y) at the SiC/SiO₂ interface

QA Wang, CG Panatano, JF Annett

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Translated title of the contribution	Ab initio calculation on atomic structure and charge transfer of silicon oxycarbide (SiO_xC_y) at the SiC/SiO₂ interface
Original language	English
Pages (from-to)	909 - 915
Journal	physica status solidi (b)
Volume	216
Publication status	Published - 1999

@article{fc597593a8114ad3b86a8ffa254a88c2,

title = "Ab initio calculation on atomic structure and charge transfer of silicon oxycarbide (SiOxCy) at the SiC/SiO2 interface",

author = "QA Wang and CG Panatano and JF Annett",

year = "1999",

language = "English",

volume = "216",

pages = "909 -- 915",

journal = "physica status solidi (b)",

issn = "1521-3951",

publisher = "Wiley-VCH Verlag",

}