Above 600 mV Open-Circuit Voltage BiI3 Solar Cells

Devendra Tiwari; Dominic Alibhai; David J. Fermin

doi:10.1021/acsenergylett.8b01182

Above 600 mV Open-Circuit Voltage BiI₃ Solar Cells

Devendra Tiwari, Dominic Alibhai, David J. Fermin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

86 Citations (Scopus)

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Abstract

Phase-pure BiI₃ films obtained by versatile gas-phase iodination of Bi₂S₃ are investigated as an absorber in photovoltaic devices. This preparation method leads to highly crystalline BiI₃ films featuring a rhombohedral phase and a high-degree of stacking order. The films are composed of micrometer-sized flat grains distributed homogeneously across the F-doped SnO₂ (FTO) substrate, exhibiting an indirect band gap transition at 1.72 eV. High-level calculations based on G₀W₀ approximation are used to rationalize the electronic structure of BiI₃, confirming the band gap value estimated experimentally. The films show p-type conductivity with an acceptor density on the order of 10¹⁵ cm^-3. Solar cells with the architecture glass/FTO/TiO₂/BiI₃/F8/Au, where F8 is poly(9,9-di-n-octylfluorenyl-2,7-diyl), display a record open-circuit voltage above 600 mV and overall power conversion efficiency of 1.2% under AM 1.5G illumination. The large open-circuit potential is rationalized in terms of carrier lifetimes longer than 1 ns as probed by time-resolved photoluminescence spectroscopy.

Original language	English
Pages (from-to)	1882-1886
Number of pages	5
Journal	ACS Energy Letters
Volume	3
Issue number	8
Early online date	11 Jul 2018
DOIs	https://doi.org/10.1021/acsenergylett.8b01182
Publication status	Published - 10 Aug 2018

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Research Groups and Themes

Bristol BioDesign Institute
Physical & Theoretical

Keywords

synthetic biology

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10.1021/acsenergylett.8b01182

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title = "Above 600 mV Open-Circuit Voltage BiI3 Solar Cells",

abstract = "Phase-pure BiI3 films obtained by versatile gas-phase iodination of Bi2S3 are investigated as an absorber in photovoltaic devices. This preparation method leads to highly crystalline BiI3 films featuring a rhombohedral phase and a high-degree of stacking order. The films are composed of micrometer-sized flat grains distributed homogeneously across the F-doped SnO2 (FTO) substrate, exhibiting an indirect band gap transition at 1.72 eV. High-level calculations based on G0W0 approximation are used to rationalize the electronic structure of BiI3, confirming the band gap value estimated experimentally. The films show p-type conductivity with an acceptor density on the order of 1015 cm-3. Solar cells with the architecture glass/FTO/TiO2/BiI3/F8/Au, where F8 is poly(9,9-di-n-octylfluorenyl-2,7-diyl), display a record open-circuit voltage above 600 mV and overall power conversion efficiency of 1.2\% under AM 1.5G illumination. The large open-circuit potential is rationalized in terms of carrier lifetimes longer than 1 ns as probed by time-resolved photoluminescence spectroscopy.",

keywords = "synthetic biology",

author = "Devendra Tiwari and Dominic Alibhai and Fermin, \{David J.\}",

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T1 - Above 600 mV Open-Circuit Voltage BiI3 Solar Cells

AU - Tiwari, Devendra

AU - Alibhai, Dominic

AU - Fermin, David J.

PY - 2018/8/10

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N2 - Phase-pure BiI3 films obtained by versatile gas-phase iodination of Bi2S3 are investigated as an absorber in photovoltaic devices. This preparation method leads to highly crystalline BiI3 films featuring a rhombohedral phase and a high-degree of stacking order. The films are composed of micrometer-sized flat grains distributed homogeneously across the F-doped SnO2 (FTO) substrate, exhibiting an indirect band gap transition at 1.72 eV. High-level calculations based on G0W0 approximation are used to rationalize the electronic structure of BiI3, confirming the band gap value estimated experimentally. The films show p-type conductivity with an acceptor density on the order of 1015 cm-3. Solar cells with the architecture glass/FTO/TiO2/BiI3/F8/Au, where F8 is poly(9,9-di-n-octylfluorenyl-2,7-diyl), display a record open-circuit voltage above 600 mV and overall power conversion efficiency of 1.2% under AM 1.5G illumination. The large open-circuit potential is rationalized in terms of carrier lifetimes longer than 1 ns as probed by time-resolved photoluminescence spectroscopy.

AB - Phase-pure BiI3 films obtained by versatile gas-phase iodination of Bi2S3 are investigated as an absorber in photovoltaic devices. This preparation method leads to highly crystalline BiI3 films featuring a rhombohedral phase and a high-degree of stacking order. The films are composed of micrometer-sized flat grains distributed homogeneously across the F-doped SnO2 (FTO) substrate, exhibiting an indirect band gap transition at 1.72 eV. High-level calculations based on G0W0 approximation are used to rationalize the electronic structure of BiI3, confirming the band gap value estimated experimentally. The films show p-type conductivity with an acceptor density on the order of 1015 cm-3. Solar cells with the architecture glass/FTO/TiO2/BiI3/F8/Au, where F8 is poly(9,9-di-n-octylfluorenyl-2,7-diyl), display a record open-circuit voltage above 600 mV and overall power conversion efficiency of 1.2% under AM 1.5G illumination. The large open-circuit potential is rationalized in terms of carrier lifetimes longer than 1 ns as probed by time-resolved photoluminescence spectroscopy.

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