Advanced GaAs power amplifier architecture linearized with a post-distortion method

S. Bensmida; K. A. Morris; J. C. Clifton; A. Lawrenson

doi:10.1109/MWSYM.2014.6848428

Advanced GaAs power amplifier architecture linearized with a post-distortion method

S. Bensmida, K. A. Morris, J. C. Clifton, A. Lawrenson

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

3 Citations (Scopus)

Abstract

Linearizing power amplifiers (PA) using digital pre-distortion (DPD) results in the use of a pre-distorted driving input signal that exhibits higher peak-to-average power ratio (PAPR). This results in a decrease in the PA efficiency which is dependent on the level of output power back-off required. This work proposes a new linearization architecture based on a new 'post-distortion' method for power amplifier (PA) nonlinearity compensation. The proposed architecture allows for PA linearization with optimal input signal drive level to avoid efficiency degradation. A pseudomorphic high electron-mobility transistor (pHEMT) dual input PA architecture is also introduced and shown to be suitable for the proposed linearization approach. In comparison to classic pre-distortion techniques, the proposed post-distortion improves the output power by 2 dB and the drain efficiency by 9% in the presence of a 20MHz LTE up-link signal.

Original language	English
Title of host publication	IEEE MTT-S International Microwave Symposium Digest
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)	9781479938698
DOIs	https://doi.org/10.1109/MWSYM.2014.6848428
Publication status	Published - 2014
Event	2014 IEEE MTT-S International Microwave Symposium, IMS 2014 - Tampa, FL, United States Duration: 1 Jun 2014 → 6 Jun 2014

Conference

Conference	2014 IEEE MTT-S International Microwave Symposium, IMS 2014
Country/Territory	United States
City	Tampa, FL
Period	1/06/14 → 6/06/14

Keywords

LTE
post-distortion
power amplifier
Pre-distortion
stacked architecture

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10.1109/MWSYM.2014.6848428

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@inproceedings{e7181689d2b1449f97ff469a2a56d2cb,

title = "Advanced GaAs power amplifier architecture linearized with a post-distortion method",

abstract = "Linearizing power amplifiers (PA) using digital pre-distortion (DPD) results in the use of a pre-distorted driving input signal that exhibits higher peak-to-average power ratio (PAPR). This results in a decrease in the PA efficiency which is dependent on the level of output power back-off required. This work proposes a new linearization architecture based on a new 'post-distortion' method for power amplifier (PA) nonlinearity compensation. The proposed architecture allows for PA linearization with optimal input signal drive level to avoid efficiency degradation. A pseudomorphic high electron-mobility transistor (pHEMT) dual input PA architecture is also introduced and shown to be suitable for the proposed linearization approach. In comparison to classic pre-distortion techniques, the proposed post-distortion improves the output power by 2 dB and the drain efficiency by 9% in the presence of a 20MHz LTE up-link signal.",

keywords = "LTE, post-distortion, power amplifier, Pre-distortion, stacked architecture",

author = "S. Bensmida and Morris, {K. A.} and Clifton, {J. C.} and A. Lawrenson",

year = "2014",

doi = "10.1109/MWSYM.2014.6848428",

language = "English",

isbn = "9781479938698",

booktitle = "IEEE MTT-S International Microwave Symposium Digest",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2014 IEEE MTT-S International Microwave Symposium, IMS 2014 ; Conference date: 01-06-2014 Through 06-06-2014",

}

Bensmida, S, Morris, KA, Clifton, JC & Lawrenson, A 2014, Advanced GaAs power amplifier architecture linearized with a post-distortion method. in IEEE MTT-S International Microwave Symposium Digest., 6848428, Institute of Electrical and Electronics Engineers (IEEE), 2014 IEEE MTT-S International Microwave Symposium, IMS 2014, Tampa, FL, United States, 1/06/14. https://doi.org/10.1109/MWSYM.2014.6848428

Advanced GaAs power amplifier architecture linearized with a post-distortion method. / Bensmida, S.; Morris, K. A.; Clifton, J. C. et al.
IEEE MTT-S International Microwave Symposium Digest. Institute of Electrical and Electronics Engineers (IEEE), 2014. 6848428.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Advanced GaAs power amplifier architecture linearized with a post-distortion method

AU - Bensmida, S.

AU - Morris, K. A.

AU - Clifton, J. C.

AU - Lawrenson, A.

PY - 2014

Y1 - 2014

N2 - Linearizing power amplifiers (PA) using digital pre-distortion (DPD) results in the use of a pre-distorted driving input signal that exhibits higher peak-to-average power ratio (PAPR). This results in a decrease in the PA efficiency which is dependent on the level of output power back-off required. This work proposes a new linearization architecture based on a new 'post-distortion' method for power amplifier (PA) nonlinearity compensation. The proposed architecture allows for PA linearization with optimal input signal drive level to avoid efficiency degradation. A pseudomorphic high electron-mobility transistor (pHEMT) dual input PA architecture is also introduced and shown to be suitable for the proposed linearization approach. In comparison to classic pre-distortion techniques, the proposed post-distortion improves the output power by 2 dB and the drain efficiency by 9% in the presence of a 20MHz LTE up-link signal.

AB - Linearizing power amplifiers (PA) using digital pre-distortion (DPD) results in the use of a pre-distorted driving input signal that exhibits higher peak-to-average power ratio (PAPR). This results in a decrease in the PA efficiency which is dependent on the level of output power back-off required. This work proposes a new linearization architecture based on a new 'post-distortion' method for power amplifier (PA) nonlinearity compensation. The proposed architecture allows for PA linearization with optimal input signal drive level to avoid efficiency degradation. A pseudomorphic high electron-mobility transistor (pHEMT) dual input PA architecture is also introduced and shown to be suitable for the proposed linearization approach. In comparison to classic pre-distortion techniques, the proposed post-distortion improves the output power by 2 dB and the drain efficiency by 9% in the presence of a 20MHz LTE up-link signal.

KW - LTE

KW - post-distortion

KW - power amplifier

KW - Pre-distortion

KW - stacked architecture

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BT - IEEE MTT-S International Microwave Symposium Digest

PB - Institute of Electrical and Electronics Engineers (IEEE)

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ER -

Advanced GaAs power amplifier architecture linearized with a post-distortion method

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