Advances in AlGaN/GaN/SiC microwave devices

MJ Uren; M Kuball

Advances in AlGaN/GaN/SiC microwave devices

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Translated title of the contribution	Advances in AlGaN/GaN/SiC microwave devices
Original language	English
Pages (from-to)	1017 - 1022
Number of pages	6
Journal	MATERIALS SCIENCE FORUM
Volume	556-557
Publication status	Published - 2007

Bibliographical note

Editors: Wright N, Johnson CM, Vassilevski K, Nikitina I, Horsfall A
Publisher: Trans. Tech. Publications Limited
Name and Venue of Conference: 6th European Conference on Silicon Carbide and Related Materials
Conference Organiser: Silicon Carbide and Related Materials Secretariat

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CDTR

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Cite this

@article{fe824584e35b4c6f87413236e09b0dbb,

title = "Advances in AlGaN/GaN/SiC microwave devices",

author = "MJ Uren and M Kuball",

note = "Editors: Wright N, Johnson CM, Vassilevski K, Nikitina I, Horsfall A Publisher: Trans. Tech. Publications Limited Name and Venue of Conference: 6th European Conference on Silicon Carbide and Related Materials Conference Organiser: Silicon Carbide and Related Materials Secretariat",

year = "2007",

language = "English",

volume = "556-557",

pages = "1017 -- 1022",

journal = "MATERIALS SCIENCE FORUM",

issn = "1662-9752",

publisher = "Trans Tech Publications Inc",

}

TY - JOUR

T1 - Advances in AlGaN/GaN/SiC microwave devices

AU - Uren, MJ

AU - Kuball, M

N1 - Editors: Wright N, Johnson CM, Vassilevski K, Nikitina I, Horsfall A Publisher: Trans. Tech. Publications Limited Name and Venue of Conference: 6th European Conference on Silicon Carbide and Related Materials Conference Organiser: Silicon Carbide and Related Materials Secretariat

PY - 2007

Y1 - 2007

M3 - Article (Academic Journal)

SN - 1662-9752

VL - 556-557

SP - 1017

EP - 1022

JO - MATERIALS SCIENCE FORUM

JF - MATERIALS SCIENCE FORUM

ER -