Alloy scattering of substitutional carbon in silicon: A first principles approach

M. P. Vaughan; F. Murphy-Armando; S. Fahy

doi:10.1109/ULIS.2011.5757983

Alloy scattering of substitutional carbon in silicon: A first principles approach

M. P. Vaughan, F. Murphy-Armando, S. Fahy

Department of Electrical & Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

A method is developed to obtain the alloy scattering coefficients from first-principles band structure calculations. It is found that the scattering matrix can be decomposed into two additive components: a chemical part due to atomic substitution and a part due to ionic relaxation. The method is then applied to find the intra-and inter-valley electron scattering rates for substitutional carbon in silicon. Intravalley scattering is found to be the dominant process.

Original language	English
Title of host publication	2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
Pages	99-102
Number of pages	4
DOIs	https://doi.org/10.1109/ULIS.2011.5757983
Publication status	Published - 2011
Event	2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011 - Cork, Ireland Duration: 14 Mar 2011 → 16 Mar 2011

Conference

Conference	2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
Country/Territory	Ireland
City	Cork
Period	14/03/11 → 16/03/11

Access to Document

10.1109/ULIS.2011.5757983

Handle.net

Persistent link

Cite this

@inproceedings{0eb9785b47eb419997bca8cc4d52b5af,

title = "Alloy scattering of substitutional carbon in silicon: A first principles approach",

abstract = "A method is developed to obtain the alloy scattering coefficients from first-principles band structure calculations. It is found that the scattering matrix can be decomposed into two additive components: a chemical part due to atomic substitution and a part due to ionic relaxation. The method is then applied to find the intra-and inter-valley electron scattering rates for substitutional carbon in silicon. Intravalley scattering is found to be the dominant process.",

author = "Vaughan, {M. P.} and F. Murphy-Armando and S. Fahy",

year = "2011",

doi = "10.1109/ULIS.2011.5757983",

language = "English",

isbn = "9781457700903",

pages = "99--102",

booktitle = "2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011",

note = "2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011 ; Conference date: 14-03-2011 Through 16-03-2011",

}

Vaughan, MP, Murphy-Armando, F & Fahy, S 2011, Alloy scattering of substitutional carbon in silicon: A first principles approach. in 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011., 5757983, pp. 99-102, 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011, Cork, Ireland, 14/03/11. https://doi.org/10.1109/ULIS.2011.5757983

TY - GEN

T1 - Alloy scattering of substitutional carbon in silicon

T2 - 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011

AU - Vaughan, M. P.

AU - Murphy-Armando, F.

AU - Fahy, S.

PY - 2011

Y1 - 2011

N2 - A method is developed to obtain the alloy scattering coefficients from first-principles band structure calculations. It is found that the scattering matrix can be decomposed into two additive components: a chemical part due to atomic substitution and a part due to ionic relaxation. The method is then applied to find the intra-and inter-valley electron scattering rates for substitutional carbon in silicon. Intravalley scattering is found to be the dominant process.

AB - A method is developed to obtain the alloy scattering coefficients from first-principles band structure calculations. It is found that the scattering matrix can be decomposed into two additive components: a chemical part due to atomic substitution and a part due to ionic relaxation. The method is then applied to find the intra-and inter-valley electron scattering rates for substitutional carbon in silicon. Intravalley scattering is found to be the dominant process.

UR - http://www.scopus.com/inward/record.url?scp=79958007093&partnerID=8YFLogxK

U2 - 10.1109/ULIS.2011.5757983

DO - 10.1109/ULIS.2011.5757983

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:79958007093

SN - 9781457700903

SP - 99

EP - 102

BT - 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011

Y2 - 14 March 2011 through 16 March 2011

ER -

Alloy scattering of substitutional carbon in silicon: A first principles approach

Abstract

Conference

Access to Document

Handle.net

Other files and links

Fingerprint

Cite this