Alloy scattering of substitutional carbon in silicon: A first principles approach

M. P. Vaughan, F. Murphy-Armando, S. Fahy

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

A method is developed to obtain the alloy scattering coefficients from first-principles band structure calculations. It is found that the scattering matrix can be decomposed into two additive components: a chemical part due to atomic substitution and a part due to ionic relaxation. The method is then applied to find the intra-and inter-valley electron scattering rates for substitutional carbon in silicon. Intravalley scattering is found to be the dominant process.

Original languageEnglish
Title of host publication2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
Pages99-102
Number of pages4
DOIs
Publication statusPublished - 2011
Event2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011 - Cork, Ireland
Duration: 14 Mar 201116 Mar 2011

Conference

Conference2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
CountryIreland
CityCork
Period14/03/1116/03/11

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