Amorphous GaN grown by room temperature molecular beam epitaxy

MHH Kuball, H Mokhtari, D Cherns, J Lu, DI Westwood

Research output: Contribution to journal › Article (Academic Journal) › peer-review

27 Citations (Scopus)

Translated title of the contribution	Amorphous GaN grown by room temperature molecular beam epitaxy
Original language	English
Pages (from-to)	4753 - 4754
Journal	Jpn. J. Appl. Phys. Pt. 1 - Regular Papers Short Notes and Review Papers
Volume	39
Publication status	Published - 2000

Publisher: Inst. Pure & Appl. Physics, Minato-Ku, Tokyo

Research Groups and Themes

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title = "Amorphous GaN grown by room temperature molecular beam epitaxy",

author = "MHH Kuball and H Mokhtari and D Cherns and J Lu and DI Westwood",

note = "Publisher: Inst. Pure & Appl. Physics, Minato-Ku, Tokyo",

year = "2000",

language = "English",

volume = "39",

pages = "4753 -- 4754",

journal = "Jpn. J. Appl. Phys. Pt. 1 - Regular Papers Short Notes and Review Papers",

issn = "1347-4065",

publisher = "Japan Society of Applied Physics",

}

TY - JOUR

T1 - Amorphous GaN grown by room temperature molecular beam epitaxy

AU - Kuball, MHH

AU - Mokhtari, H

AU - Cherns, D

AU - Lu, J

AU - Westwood, DI

N1 - Publisher: Inst. Pure & Appl. Physics, Minato-Ku, Tokyo

PY - 2000

Y1 - 2000

M3 - Article (Academic Journal)

SN - 1347-4065

VL - 39

SP - 4753

EP - 4754

JO - Jpn. J. Appl. Phys. Pt. 1 - Regular Papers Short Notes and Review Papers

JF - Jpn. J. Appl. Phys. Pt. 1 - Regular Papers Short Notes and Review Papers

ER -