An analysis of the switching performance and robustness of power MOSFETs body diodes: A technology evaluation

Saeed Jahdi, Olayiwola Alatise, Roozbeh Bonyadi, Petros Alexakis, Craig A. Fisher, Jose A Ortiz Gonzalez, Li Ran, Philip Mawby

Research output: Contribution to journalArticle (Academic Journal)peer-review

42 Citations (Scopus)
164 Downloads (Pure)


The tradeoff between the switching energy and electro-thermal robustness is explored for 1.2-kV SiC MOSFET, silicon power MOSFET, and 900-V CoolMOS body diodes at different temperatures. The maximum forward current for dynamic avalanche breakdown is decreased with increasing supply voltage and temperature for all technologies. The CoolMOS exhibited the largest latch-up current followed by the SiC MOSFET and silicon power MOSFET; however, when expressed as current density, the SiC MOSFET comes first followed by the CoolMOS and silicon power MOSFET. For the CoolMOS, the alternating p and n pillars of the superjunctions in the drift region suppress BJT latch-up during reverse recovery by minimizing lateral currents and providing low-resistance paths for carriers. Hence, the temperature dependence of the latch-up current for CoolMOS was the lowest. The switching energy of the CoolMOS body diode is the largest because of its superjunction architecture which means the drift region have higher doping, hence more reverse charge. In spite of having a higher thermal resistance, the SiC MOSFET has approximately the same latch-up current while exhibiting the lowest switching energy because of the least reverse charge. The silicon power MOSFET exhibits intermediate performance on switching energy with lowest dynamic latching current.

Original languageEnglish
Pages (from-to)2383-2394
Number of pages12
JournalIEEE Transactions on Power Electronics
Issue number5
Early online date11 Jul 2014
Publication statusPublished - 1 May 2015


  • Body diode
  • electrothermal ruggedness
  • reverse recovery
  • robustness.

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